Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H. J. Pohl, M. L W Thewalt, Kohei M Itoh, M. S. Brandt

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

Original languageEnglish
Article number032101
JournalApplied Physics Letters
Volume99
Issue number3
DOIs
Publication statusPublished - 2011 Jul 18

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electron paramagnetic resonance
boron
impurities
resonance lines
point defects
purity
isotopes
retarding
carbon
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Stegner, A. R., Tezuka, H., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. J., ... Brandt, M. S. (2011). Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si. Applied Physics Letters, 99(3), [032101]. https://doi.org/10.1063/1.3606548

Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si. / Stegner, A. R.; Tezuka, H.; Riemann, H.; Abrosimov, N. V.; Becker, P.; Pohl, H. J.; Thewalt, M. L W; Itoh, Kohei M; Brandt, M. S.

In: Applied Physics Letters, Vol. 99, No. 3, 032101, 18.07.2011.

Research output: Contribution to journalArticle

Stegner, AR, Tezuka, H, Riemann, H, Abrosimov, NV, Becker, P, Pohl, HJ, Thewalt, MLW, Itoh, KM & Brandt, MS 2011, 'Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si', Applied Physics Letters, vol. 99, no. 3, 032101. https://doi.org/10.1063/1.3606548
Stegner, A. R. ; Tezuka, H. ; Riemann, H. ; Abrosimov, N. V. ; Becker, P. ; Pohl, H. J. ; Thewalt, M. L W ; Itoh, Kohei M ; Brandt, M. S. / Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si. In: Applied Physics Letters. 2011 ; Vol. 99, No. 3.
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