Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner; H. Tezuka; H. Riemann; N. V. Abrosimov; P. Becker; H. J. Pohl; M. L.W. Thewalt; K. M. Itoh; M. S. Brandt

doi:10.1063/1.3606548

Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H. J. Pohl, M. L.W. Thewalt, K. M. Itoh, M. S. Brandt

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered ²⁸Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 10¹⁵ cm^-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

Original language	English
Article number	032101
Journal	Applied Physics Letters
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.3606548
Publication status	Published - 2011 Jul 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3606548

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@article{804dde6ff2d443678678bbf0c450f0b1,

title = "Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si",

abstract = "Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.",

author = "Stegner, {A. R.} and H. Tezuka and H. Riemann and Abrosimov, {N. V.} and P. Becker and Pohl, {H. J.} and Thewalt, {M. L.W.} and Itoh, {K. M.} and Brandt, {M. S.}",

note = "Funding Information: We acknowledge support from the JST-DFG Strategic Cooperative Program on Nanoelectronics and the Grant-in-Aid for Scientific Research by MEXT, Nanoquine, FIRST, and Keio Global COE.",

year = "2011",

month = jul,

day = "18",

doi = "10.1063/1.3606548",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

AU - Stegner, A. R.

AU - Tezuka, H.

AU - Riemann, H.

AU - Abrosimov, N. V.

AU - Becker, P.

AU - Pohl, H. J.

AU - Thewalt, M. L.W.

AU - Itoh, K. M.

AU - Brandt, M. S.

N1 - Funding Information: We acknowledge support from the JST-DFG Strategic Cooperative Program on Nanoelectronics and the Grant-in-Aid for Scientific Research by MEXT, Nanoquine, FIRST, and Keio Global COE.

PY - 2011/7/18

Y1 - 2011/7/18

N2 - Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

AB - Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

UR - http://www.scopus.com/inward/record.url?scp=79960759532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960759532&partnerID=8YFLogxK

U2 - 10.1063/1.3606548

DO - 10.1063/1.3606548

M3 - Article

AN - SCOPUS:79960759532

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032101

ER -

Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

Abstract

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