Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H. J. Pohl, M. L.W. Thewalt, K. M. Itoh, M. S. Brandt

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Physics & Astronomy