Corrosion resistance of aluminum nitride as semiconductor equipment parts studied by micro-Raman spectroscopy

Hirotaka Fujimori, Yoji Tamura, Akira Harita, Koji Ioku, Masato Kakihana, Masahiro Yoshimura, Seishi Goto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A micro-Raman spectroscopic investigation has been performed to observe structural disorder in each grain of aluminum nitride ceramics as semiconductor equipment parts. A selective thermal oxidation treatment normalizes a different rate of a corrosion reaction depending on the crystal face and consequently improves the corrosion resistance. Upon thermal oxidation treatment, line widths of Raman bands increased more in grains including mainly crystals with (100) preferred orientation than in those of (002), indicating that (100) faces oxidize preferentially rather than (002) faces. According to Raman shift from the oxidized sample, oxidation induces residual compressive stress for grains including a large number of (100) prefer-oriented crystals. On fluorination of the oxidized sample, no increase of line widths was observed in both kinds of grains, suggesting that prior anisotropic thermal oxidation treatment of (100) faces, which are more sensitive to corrosion than (002) faces, inhibits the progress of corrosion.

Original languageEnglish
Pages (from-to)935-938
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume111
Issue number1300
DOIs
Publication statusPublished - 2003 Dec
Externally publishedYes

Keywords

  • Aluminum nitride
  • Corrosion resistance
  • Micro-Raman
  • Semiconductor equipment parts

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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