Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate

Hiroki Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, T. Ikoma

Research output: Contribution to journalArticle

185 Citations (Scopus)

Abstract

We have developed a very controllable fabrication process of an extremely narrow (∼10 nm) quantum wire metal-oxide-semiconductor field-effect transistor (MOSFET) on a separation-by-implanted-oxygen (SIMOX) substrate using anisotropic etching and selective oxidation technique. The drain current versus gate voltage characteristics show oscillations caused by Coulomb blockade even at room temperature. The oscillations split into several sharp peaks when the temperature is decreased, indicating that the channel is separated by several serial coupled quantum dots and that the quantum levels of these dots correspond to the observed fine peaks.

Original languageEnglish
Pages (from-to)3585-3587
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number25
DOIs
Publication statusPublished - 1996
Externally publishedYes

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quantum wires
metal oxide semiconductors
field effect transistors
insulators
etching
oscillations
silicon
room temperature
quantum dots
oxidation
fabrication
electric potential
oxygen
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate. / Ishikuro, Hiroki; Fujii, T.; Saraya, T.; Hashiguchi, G.; Hiramoto, T.; Ikoma, T.

In: Applied Physics Letters, Vol. 68, No. 25, 1996, p. 3585-3587.

Research output: Contribution to journalArticle

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AU - Hiramoto, T.

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