Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation

Yoko Kawamura, Yasuo Shimizu, Hiroyuki Oshikawa, Masashi Uematsu, Eugene E. Haller, Kohei M Itoh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using 70Ge/ natGe isotope superlattices (SLs). The profiles of 74Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5nm for Si.

Original languageEnglish
Article number071303
JournalApplied Physics Express
Volume3
Issue number7
DOIs
Publication statusPublished - 2010 Jul

Fingerprint

Amorphization
Arsenic
Germanium
arsenic
Ion implantation
germanium
implantation
Atoms
Isotopes
germanium isotopes
atoms
Superlattices
Secondary ion mass spectrometry
secondary ion mass spectrometry
superlattices
isotopes
Crystalline materials
Transmission electron microscopy
dosage
transmission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation. / Kawamura, Yoko; Shimizu, Yasuo; Oshikawa, Hiroyuki; Uematsu, Masashi; Haller, Eugene E.; Itoh, Kohei M.

In: Applied Physics Express, Vol. 3, No. 7, 071303, 07.2010.

Research output: Contribution to journalArticle

Kawamura, Yoko ; Shimizu, Yasuo ; Oshikawa, Hiroyuki ; Uematsu, Masashi ; Haller, Eugene E. ; Itoh, Kohei M. / Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation. In: Applied Physics Express. 2010 ; Vol. 3, No. 7.
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