Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation

Yoko Kawamura, Yasuo Shimizu, Hiroyuki Oshikawa, Masashi Uematsu, Eugene E. Haller, Kohei M. Itoh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using 70Ge/ natGe isotope superlattices (SLs). The profiles of 74Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5nm for Si.

Original languageEnglish
Article number071303
JournalApplied Physics Express
Volume3
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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