Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation

Yoko Kawamura; Yasuo Shimizu; Hiroyuki Oshikawa; Masashi Uematsu; Eugene E. Haller; Kohei M. Itoh

doi:10.1143/APEX.3.071303

Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation

Yoko Kawamura, Yasuo Shimizu, Hiroyuki Oshikawa, Masashi Uematsu, Eugene E. Haller, Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using ⁷⁰Ge/ ^natGe isotope superlattices (SLs). The profiles of ⁷⁴Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5nm for Si.

Original language	English
Article number	071303
Journal	Applied Physics Express
Volume	3
Issue number	7
DOIs	https://doi.org/10.1143/APEX.3.071303
Publication status	Published - 2010 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using 70Ge/ natGe isotope superlattices (SLs). The profiles of 74Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5nm for Si.",

author = "Yoko Kawamura and Yasuo Shimizu and Hiroyuki Oshikawa and Masashi Uematsu and Haller, {Eugene E.} and Itoh, {Kohei M.}",

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T1 - Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation

AU - Kawamura, Yoko

AU - Shimizu, Yasuo

AU - Oshikawa, Hiroyuki

AU - Uematsu, Masashi

AU - Haller, Eugene E.

AU - Itoh, Kohei M.

PY - 2010/7

Y1 - 2010/7

N2 - We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using 70Ge/ natGe isotope superlattices (SLs). The profiles of 74Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5nm for Si.

AB - We evaluated quantitatively the germanium (Ge) displacement induced by arsenic (As) implantation as a function of the depth from the sample surface both in the amorphous and single-crystalline regions using 70Ge/ natGe isotope superlattices (SLs). The profiles of 74Ge in the Ge isotope SLs were measured by secondary ion mass spectrometry and the sample structure along the depth was observed by cross-sectional transmission electron microscopy. The critical Ge displacement for amorphization induced by As implantation is found to be 0.75 nm, which is independent of the implantation doses. This value is 50% larger than 0.5nm for Si.

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Critical displacement of host-atoms for amorphization in germanium induced by arsenic implantation

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