Cryogenic CMOS Performance Analysis Including BEOL Characteristics at 4K for Quantum Controller Application

K. Okamoto, T. Tanaka, M. Miyamura, H. Ishikuro, K. Uchida, T. Sakamoto, M. Tada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cryo-CMOS circuit performance at 4K including both BEOL and FEOL characteristics has been investigated in a 65nm bulk CMOS for the first time. ON-current (Ion) of n/pMOSFET are improved +25%/+9% with excellent gate modulation (Ion/Ioff=∼109). Cu line/via resistances decrease with temperature due to reduction of phonon scattering, and -75%/-20% lower resistances are obtained at 4K. It is revealed that there is no inter-line capacitance change and no severe Joule heating effect (JHE) of Cu BEOL at 4K. The newly developed 4K-SPICE model including BEOL characteristics enables accurate CMOS circuit design at 4K, giving 5 ∼ 40% faster operation of RC line with clear dependence on driver-size and interconnect-load.

Original languageEnglish
Title of host publication2022 IEEE International Interconnect Technology Conference, IITC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages139-141
Number of pages3
ISBN (Electronic)9781665486460
DOIs
Publication statusPublished - 2022
Event2022 IEEE International Interconnect Technology Conference, IITC 2022 - San Jose, United States
Duration: 2022 Jun 272022 Jun 30

Publication series

Name2022 IEEE International Interconnect Technology Conference, IITC 2022

Conference

Conference2022 IEEE International Interconnect Technology Conference, IITC 2022
Country/TerritoryUnited States
CitySan Jose
Period22/6/2722/6/30

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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