Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer

Nobuyuki Shishido, Yuka Oura, Hisashi Sato, Shoji Kamiya, Kozo Koiwa, Masaki Omiya, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Takeshi Nokuo, Toshiaki Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Local adhesion strength of the interface composed of a single copper grain and SiN insulation layer was evaluated by using subgrain-scale specimens fabricated on a damascene interconnect structure. Crystallographic information was also surveyed at the fracture sites of the specimens in view of possible correlations between the strength and the crystal orientation of copper. Evaluated strength distributed on the crystal orientation map with a wide range of scatter, which indicates that copper crystal orientation plays an important role on adhesion strength. In addition, the relationship between the evaluated adhesion strength and the crystal orientation of copper grain suggests the significant contribution of the energy to be dissipated to plastic deformation. The result of this fundamental evaluation supports the possible variation of local interface adhesion strength in damascene interconnects which consist of polycrystalline copper and the insulation layer.

Original languageEnglish
Pages (from-to)71-76
Number of pages6
JournalMicroelectronic Engineering
Volume120
DOIs
Publication statusPublished - 2014 May 25

Fingerprint

Bond strength (materials)
insulation
Crystal orientation
Insulation
Copper
adhesion
copper
crystals
Plastic deformation
plastic deformation
evaluation

Keywords

  • Adhesion strength
  • Copper interconnect
  • Crystal orientation
  • Grain
  • Interface

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer. / Shishido, Nobuyuki; Oura, Yuka; Sato, Hisashi; Kamiya, Shoji; Koiwa, Kozo; Omiya, Masaki; Nishida, Masahiro; Suzuki, Takashi; Nakamura, Tomoji; Nokuo, Takeshi; Suzuki, Toshiaki.

In: Microelectronic Engineering, Vol. 120, 25.05.2014, p. 71-76.

Research output: Contribution to journalArticle

Shishido, N, Oura, Y, Sato, H, Kamiya, S, Koiwa, K, Omiya, M, Nishida, M, Suzuki, T, Nakamura, T, Nokuo, T & Suzuki, T 2014, 'Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer', Microelectronic Engineering, vol. 120, pp. 71-76. https://doi.org/10.1016/j.mee.2013.12.032
Shishido, Nobuyuki ; Oura, Yuka ; Sato, Hisashi ; Kamiya, Shoji ; Koiwa, Kozo ; Omiya, Masaki ; Nishida, Masahiro ; Suzuki, Takashi ; Nakamura, Tomoji ; Nokuo, Takeshi ; Suzuki, Toshiaki. / Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer. In: Microelectronic Engineering. 2014 ; Vol. 120. pp. 71-76.
@article{9d3c34ebdc4b46fbae5f2188ec3252a1,
title = "Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer",
abstract = "Local adhesion strength of the interface composed of a single copper grain and SiN insulation layer was evaluated by using subgrain-scale specimens fabricated on a damascene interconnect structure. Crystallographic information was also surveyed at the fracture sites of the specimens in view of possible correlations between the strength and the crystal orientation of copper. Evaluated strength distributed on the crystal orientation map with a wide range of scatter, which indicates that copper crystal orientation plays an important role on adhesion strength. In addition, the relationship between the evaluated adhesion strength and the crystal orientation of copper grain suggests the significant contribution of the energy to be dissipated to plastic deformation. The result of this fundamental evaluation supports the possible variation of local interface adhesion strength in damascene interconnects which consist of polycrystalline copper and the insulation layer.",
keywords = "Adhesion strength, Copper interconnect, Crystal orientation, Grain, Interface",
author = "Nobuyuki Shishido and Yuka Oura and Hisashi Sato and Shoji Kamiya and Kozo Koiwa and Masaki Omiya and Masahiro Nishida and Takashi Suzuki and Tomoji Nakamura and Takeshi Nokuo and Toshiaki Suzuki",
year = "2014",
month = "5",
day = "25",
doi = "10.1016/j.mee.2013.12.032",
language = "English",
volume = "120",
pages = "71--76",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer

AU - Shishido, Nobuyuki

AU - Oura, Yuka

AU - Sato, Hisashi

AU - Kamiya, Shoji

AU - Koiwa, Kozo

AU - Omiya, Masaki

AU - Nishida, Masahiro

AU - Suzuki, Takashi

AU - Nakamura, Tomoji

AU - Nokuo, Takeshi

AU - Suzuki, Toshiaki

PY - 2014/5/25

Y1 - 2014/5/25

N2 - Local adhesion strength of the interface composed of a single copper grain and SiN insulation layer was evaluated by using subgrain-scale specimens fabricated on a damascene interconnect structure. Crystallographic information was also surveyed at the fracture sites of the specimens in view of possible correlations between the strength and the crystal orientation of copper. Evaluated strength distributed on the crystal orientation map with a wide range of scatter, which indicates that copper crystal orientation plays an important role on adhesion strength. In addition, the relationship between the evaluated adhesion strength and the crystal orientation of copper grain suggests the significant contribution of the energy to be dissipated to plastic deformation. The result of this fundamental evaluation supports the possible variation of local interface adhesion strength in damascene interconnects which consist of polycrystalline copper and the insulation layer.

AB - Local adhesion strength of the interface composed of a single copper grain and SiN insulation layer was evaluated by using subgrain-scale specimens fabricated on a damascene interconnect structure. Crystallographic information was also surveyed at the fracture sites of the specimens in view of possible correlations between the strength and the crystal orientation of copper. Evaluated strength distributed on the crystal orientation map with a wide range of scatter, which indicates that copper crystal orientation plays an important role on adhesion strength. In addition, the relationship between the evaluated adhesion strength and the crystal orientation of copper grain suggests the significant contribution of the energy to be dissipated to plastic deformation. The result of this fundamental evaluation supports the possible variation of local interface adhesion strength in damascene interconnects which consist of polycrystalline copper and the insulation layer.

KW - Adhesion strength

KW - Copper interconnect

KW - Crystal orientation

KW - Grain

KW - Interface

UR - http://www.scopus.com/inward/record.url?scp=84898793782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898793782&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2013.12.032

DO - 10.1016/j.mee.2013.12.032

M3 - Article

AN - SCOPUS:84898793782

VL - 120

SP - 71

EP - 76

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -