Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer

Nobuyuki Shishido, Yuka Oura, Hisashi Sato, Shoji Kamiya, Kozo Koiwa, Masaki Omiya, Masahiro Nishida, Takashi Suzuki, Tomoji Nakamura, Takeshi Nokuo, Toshiaki Suzuki

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3 Citations (Scopus)

Abstract

Local adhesion strength of the interface composed of a single copper grain and SiN insulation layer was evaluated by using subgrain-scale specimens fabricated on a damascene interconnect structure. Crystallographic information was also surveyed at the fracture sites of the specimens in view of possible correlations between the strength and the crystal orientation of copper. Evaluated strength distributed on the crystal orientation map with a wide range of scatter, which indicates that copper crystal orientation plays an important role on adhesion strength. In addition, the relationship between the evaluated adhesion strength and the crystal orientation of copper grain suggests the significant contribution of the energy to be dissipated to plastic deformation. The result of this fundamental evaluation supports the possible variation of local interface adhesion strength in damascene interconnects which consist of polycrystalline copper and the insulation layer.

Original languageEnglish
Pages (from-to)71-76
Number of pages6
JournalMicroelectronic Engineering
Volume120
DOIs
Publication statusPublished - 2014 May 25

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Keywords

  • Adhesion strength
  • Copper interconnect
  • Crystal orientation
  • Grain
  • Interface

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Shishido, N., Oura, Y., Sato, H., Kamiya, S., Koiwa, K., Omiya, M., Nishida, M., Suzuki, T., Nakamura, T., Nokuo, T., & Suzuki, T. (2014). Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer. Microelectronic Engineering, 120, 71-76. https://doi.org/10.1016/j.mee.2013.12.032