Abstract
A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.
Original language | English |
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Pages (from-to) | 121-126 |
Number of pages | 6 |
Journal | Ferroelectrics |
Volume | 264 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 Dec 1 |
Event | 3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China Duration: 2000 Dec 12 → 2000 Dec 15 |
Keywords
- crystal structure
- phase transformation
- thin film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics