Crystal structures of BaMgF4-xOxn thin films

Xiaoli Wang; Shinobu Fujihara; Toshio Kimura; Haydn Chen

doi:10.1080/00150190108235348

Crystal structures of BaMgF_4-xO_xn thin films

Xiaoli Wang, Shinobu Fujihara, Toshio Kimura, Haydn Chen

Department of Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

A chemical deposition method has been employed to synthesize BaMgF ₄ thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF₄-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF_4-xO_x/2 instead of BaMgF₄. The phase transformation and the crystal structures of BaMgF_4-xO _x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF_4-xO_x/2 was identified.

Original language	English
Pages (from-to)	121-126
Number of pages	6
Journal	Ferroelectrics
Volume	264
Issue number	1
DOIs	https://doi.org/10.1080/00150190108235348
Publication status	Published - 2001 Dec 1
Event	3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China Duration: 2000 Dec 12 → 2000 Dec 15

Keywords

crystal structure
phase transformation
thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/00150190108235348

Cite this

@article{fee8052814ea4b9f91f3405132554b05,

title = "Crystal structures of BaMgF4-xOxn thin films",

abstract = "A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.",

keywords = "crystal structure, phase transformation, thin film",

author = "Xiaoli Wang and Shinobu Fujihara and Toshio Kimura and Haydn Chen",

year = "2001",

month = dec,

day = "1",

doi = "10.1080/00150190108235348",

language = "English",

volume = "264",

pages = "121--126",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "3rd Asian Meeting on Ferroelectrics, AMF-3 ; Conference date: 12-12-2000 Through 15-12-2000",

}

TY - JOUR

T1 - Crystal structures of BaMgF4-xOxn thin films

AU - Wang, Xiaoli

AU - Fujihara, Shinobu

AU - Kimura, Toshio

AU - Chen, Haydn

PY - 2001/12/1

Y1 - 2001/12/1

N2 - A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.

AB - A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.

KW - crystal structure

KW - phase transformation

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=71149107935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71149107935&partnerID=8YFLogxK

U2 - 10.1080/00150190108235348

DO - 10.1080/00150190108235348

M3 - Conference article

AN - SCOPUS:71149107935

VL - 264

SP - 121

EP - 126

JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

IS - 1

T2 - 3rd Asian Meeting on Ferroelectrics, AMF-3

Y2 - 12 December 2000 through 15 December 2000

ER -