Crystal structures of BaMgF4-xOxn thin films

Xiaoli Wang, Shinobu Fujihara, Toshio Kimura, Haydn Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalFerroelectrics
Volume264
Issue number1
DOIs
Publication statusPublished - 2001

Fingerprint

Crystal structure
Thin films
crystal structure
thin films
Ions
Fluorine
oxygen ions
Surface structure
Anions
phase transformations
fluorine
Negative ions
Phase transitions
Heat treatment
Oxygen
anions
Chemical analysis
ions
Temperature
temperature

Keywords

  • crystal structure
  • phase transformation
  • thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Crystal structures of BaMgF4-xOxn thin films. / Wang, Xiaoli; Fujihara, Shinobu; Kimura, Toshio; Chen, Haydn.

In: Ferroelectrics, Vol. 264, No. 1, 2001, p. 121-126.

Research output: Contribution to journalArticle

Wang, Xiaoli ; Fujihara, Shinobu ; Kimura, Toshio ; Chen, Haydn. / Crystal structures of BaMgF4-xOxn thin films. In: Ferroelectrics. 2001 ; Vol. 264, No. 1. pp. 121-126.
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