Crystallographic effect on subsurface damage formation in silicon microcutting

Jiwang Yan, Tooru Asami, Hirofumi Harada, Tsunemoto Kuriyagawa

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

Nanoprecision plunge cutting tests were carried out on single-crystal silicon (0 0 1) samples along various directions at different tool rake angles, and subsurface damage was characterized by cross-sectional transmission electron microscopy and laser micro-Raman spectroscopy. It was found that amorphization, poly-crystallization, dislocation and internal microcracking occurred and these material responses depended strongly on the cutting direction. When cutting in the 11̄0 and 01̄0 directions, deep line defects consisting of microcracks and dislocation groups occurred even when the surface was "ductile"-cut; while for the 1283090 direction, the damage depth was reduced by a factor of five.

Original languageEnglish
Pages (from-to)131-134
Number of pages4
JournalCIRP Annals - Manufacturing Technology
Volume61
Issue number1
DOIs
Publication statusPublished - 2012

Fingerprint

Silicon
Microcracking
Amorphization
Microcracks
Dislocations (crystals)
Raman spectroscopy
Crystallization
Single crystals
Transmission electron microscopy
Defects
Lasers

Keywords

  • Cutting
  • Single crystal
  • Surface integrity

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering

Cite this

Crystallographic effect on subsurface damage formation in silicon microcutting. / Yan, Jiwang; Asami, Tooru; Harada, Hirofumi; Kuriyagawa, Tsunemoto.

In: CIRP Annals - Manufacturing Technology, Vol. 61, No. 1, 2012, p. 131-134.

Research output: Contribution to journalArticle

Yan, Jiwang ; Asami, Tooru ; Harada, Hirofumi ; Kuriyagawa, Tsunemoto. / Crystallographic effect on subsurface damage formation in silicon microcutting. In: CIRP Annals - Manufacturing Technology. 2012 ; Vol. 61, No. 1. pp. 131-134.
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