C60 nanowhisker field-effect-transistor application for nano-electronics

Ken Ichi Ogawa; Nobuyuki Aoki; Kun'ichi Miyazawa; Shigeo Nakamura; Tadahiko Mashino; Jonathan P. Bird; Yuichi Ochiai

doi:10.1143/JJAP.47.501

C₆₀ nanowhisker field-effect-transistor application for nano-electronics

Ken Ichi Ogawa, Nobuyuki Aoki, Kun'ichi Miyazawa, Shigeo Nakamura, Tadahiko Mashino, Jonathan P. Bird, Yuichi Ochiai

School of Pharmaceutical Sciences

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Various kinds of field-effect transistor (FET) have been fabricated with C₆₀ nanowhisker (NW) and also studied for nanoelectronics application. Especially, pure and solvated C₆₀ NWs have been synthesized in N2 environment so as to clarify the best device performance of C₆₀ NW-FET. The FET works not only under vacuum but also in N2 environment when kept in the solvated condition. The solvated C₆₀ NW-FET shows a clear improvement of their on/off ratio in the solvated condition, and the highest electron mobility after annealing. Although further study is needed, our results demonstrate the possibility, by appropriate choice of the solvent, of achieving good improvements in FET performance. Moreover, new kinds of C₆₀ NW, such as derivative-based and nanotube-type one, have also been studied with regards to their fundamental FET characteristics.

Original language	English
Pages (from-to)	501-504
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	1 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.501
Publication status	Published - 2008 Jan 22

Keywords

C
Carbon nano material
FET
Nano electronics
Nanowhisker
Solvate

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.47.501

Cite this

@article{91fef10cb2074d37980fa2477dc7c65f,

title = "C60 nanowhisker field-effect-transistor application for nano-electronics",

abstract = "Various kinds of field-effect transistor (FET) have been fabricated with C60 nanowhisker (NW) and also studied for nanoelectronics application. Especially, pure and solvated C60 NWs have been synthesized in N2 environment so as to clarify the best device performance of C60 NW-FET. The FET works not only under vacuum but also in N2 environment when kept in the solvated condition. The solvated C60 NW-FET shows a clear improvement of their on/off ratio in the solvated condition, and the highest electron mobility after annealing. Although further study is needed, our results demonstrate the possibility, by appropriate choice of the solvent, of achieving good improvements in FET performance. Moreover, new kinds of C60 NW, such as derivative-based and nanotube-type one, have also been studied with regards to their fundamental FET characteristics.",

keywords = "C, Carbon nano material, FET, Nano electronics, Nanowhisker, Solvate",

author = "Ogawa, {Ken Ichi} and Nobuyuki Aoki and Kun'ichi Miyazawa and Shigeo Nakamura and Tadahiko Mashino and Bird, {Jonathan P.} and Yuichi Ochiai",

year = "2008",

month = jan,

day = "22",

doi = "10.1143/JJAP.47.501",

language = "English",

volume = "47",

pages = "501--504",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1 PART 2",

}

TY - JOUR

T1 - C60 nanowhisker field-effect-transistor application for nano-electronics

AU - Ogawa, Ken Ichi

AU - Aoki, Nobuyuki

AU - Miyazawa, Kun'ichi

AU - Nakamura, Shigeo

AU - Mashino, Tadahiko

AU - Bird, Jonathan P.

AU - Ochiai, Yuichi

PY - 2008/1/22

Y1 - 2008/1/22

N2 - Various kinds of field-effect transistor (FET) have been fabricated with C60 nanowhisker (NW) and also studied for nanoelectronics application. Especially, pure and solvated C60 NWs have been synthesized in N2 environment so as to clarify the best device performance of C60 NW-FET. The FET works not only under vacuum but also in N2 environment when kept in the solvated condition. The solvated C60 NW-FET shows a clear improvement of their on/off ratio in the solvated condition, and the highest electron mobility after annealing. Although further study is needed, our results demonstrate the possibility, by appropriate choice of the solvent, of achieving good improvements in FET performance. Moreover, new kinds of C60 NW, such as derivative-based and nanotube-type one, have also been studied with regards to their fundamental FET characteristics.

AB - Various kinds of field-effect transistor (FET) have been fabricated with C60 nanowhisker (NW) and also studied for nanoelectronics application. Especially, pure and solvated C60 NWs have been synthesized in N2 environment so as to clarify the best device performance of C60 NW-FET. The FET works not only under vacuum but also in N2 environment when kept in the solvated condition. The solvated C60 NW-FET shows a clear improvement of their on/off ratio in the solvated condition, and the highest electron mobility after annealing. Although further study is needed, our results demonstrate the possibility, by appropriate choice of the solvent, of achieving good improvements in FET performance. Moreover, new kinds of C60 NW, such as derivative-based and nanotube-type one, have also been studied with regards to their fundamental FET characteristics.

KW - C

KW - Carbon nano material

KW - FET

KW - Nano electronics

KW - Nanowhisker

KW - Solvate

UR - http://www.scopus.com/inward/record.url?scp=54249106413&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54249106413&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.501

DO - 10.1143/JJAP.47.501

M3 - Article

AN - SCOPUS:54249106413

SN - 0021-4922

VL - 47

SP - 501

EP - 504

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 1 PART 2

ER -