TY - JOUR
T1 - Current driven magnetic actuation of a MEMS silicon beam in a transmission electron microscope
AU - Lobato-Dauzier, Nicolas
AU - Denoual, Matthieu
AU - Sato, Takaaki
AU - Tachikawa, Saeko
AU - Jalabert, Laurent
AU - Fujita, Hiroyuki
N1 - Funding Information:
This work was supported by JSPS KAKENHI grant number JP17H01049 .
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/2
Y1 - 2019/2
N2 - Micro-Electro-Mechanical-System (MEMS) devices associated to Transmission Electron Microscopes (TEM) have demonstrated their high potential for atomic resolution imaging of specimen while applying stress for mechanical testing. This paper introduces a novel actuation principle for the MEMS device in TEM relying on the internal magnetic field of the TEM and current flow through the device. The actuation principle is experimentally demonstrated in TEM and entirely modeled in the case of a silicon beam. The model is validated through static and dynamic experimental studies. The thermal side-effect of current flow is taken into account. The major advantages of the proposed magnetic actuation principle are the bidirectional control of the displacement of the device, the intrinsic linear displacement of the device with applied current and the potential milliNewton (mN) range force generation.
AB - Micro-Electro-Mechanical-System (MEMS) devices associated to Transmission Electron Microscopes (TEM) have demonstrated their high potential for atomic resolution imaging of specimen while applying stress for mechanical testing. This paper introduces a novel actuation principle for the MEMS device in TEM relying on the internal magnetic field of the TEM and current flow through the device. The actuation principle is experimentally demonstrated in TEM and entirely modeled in the case of a silicon beam. The model is validated through static and dynamic experimental studies. The thermal side-effect of current flow is taken into account. The major advantages of the proposed magnetic actuation principle are the bidirectional control of the displacement of the device, the intrinsic linear displacement of the device with applied current and the potential milliNewton (mN) range force generation.
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U2 - 10.1016/j.ultramic.2018.12.002
DO - 10.1016/j.ultramic.2018.12.002
M3 - Article
C2 - 30572300
AN - SCOPUS:85058487073
SN - 0304-3991
VL - 197
SP - 100
EP - 104
JO - Ultramicroscopy
JF - Ultramicroscopy
ER -