Current-driven phase-change optical gate switch using indium-tin-oxide heater

Kentaro Kato, Masashi Kuwahara, Hitoshi Kawashima, Tohru Tsuruoka, Hiroyuki Tsuda

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We proposed and fabricated a current-driven phase-change optical gate switch using a Ge2Sb2Te 5 (GST225) thin film, an indium-tin-oxide (ITO) heater, and a Si waveguide. Microfabrication technology compatible with CMOS fabrication was used for the fabrication of the Si waveguide. The repetitive phase changing of GST225 was obtained by injecting a current pulse into the ITO heater beneath the GST225 thin film. The switching operation was observed by injecting a 100-ns current pulse of 20 mA into the ITO heater. The average extinction ratio over the wavelength range of 1,525 to 1,625nm was 1.2 dB.

Original languageEnglish
Article number072201
JournalApplied Physics Express
Volume10
Issue number7
DOIs
Publication statusPublished - 2017 Jul 1

Fingerprint

Tin oxides
heaters
indium oxides
Indium
tin oxides
switches
Switches
Waveguides
waveguides
Fabrication
Thin films
fabrication
Microfabrication
thin films
pulses
CMOS
extinction
Wavelength
wavelengths

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Current-driven phase-change optical gate switch using indium-tin-oxide heater. / Kato, Kentaro; Kuwahara, Masashi; Kawashima, Hitoshi; Tsuruoka, Tohru; Tsuda, Hiroyuki.

In: Applied Physics Express, Vol. 10, No. 7, 072201, 01.07.2017.

Research output: Contribution to journalArticle

Kato, Kentaro ; Kuwahara, Masashi ; Kawashima, Hitoshi ; Tsuruoka, Tohru ; Tsuda, Hiroyuki. / Current-driven phase-change optical gate switch using indium-tin-oxide heater. In: Applied Physics Express. 2017 ; Vol. 10, No. 7.
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