Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Xin Zhou, Ken Uchida, Shunri Oda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.

Original languageEnglish
Article number092112
JournalApplied Physics Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2010
Externally publishedYes

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nanocrystals
thin films
charging
electric potential
conduction
intersections
transistors

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Current fluctuations in three-dimensionally stacked Si nanocrystals thin films. / Zhou, Xin; Uchida, Ken; Oda, Shunri.

In: Applied Physics Letters, Vol. 96, No. 9, 092112, 2010.

Research output: Contribution to journalArticle

Zhou, Xin ; Uchida, Ken ; Oda, Shunri. / Current fluctuations in three-dimensionally stacked Si nanocrystals thin films. In: Applied Physics Letters. 2010 ; Vol. 96, No. 9.
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