Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Xin Zhou; Ken Uchida; Shunri Oda

doi:10.1063/1.3294329

Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Xin Zhou, Ken Uchida, Shunri Oda

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (I_ds) exhibits fluctuations in particular gate voltage (V_g) and drain voltage (V_ds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.

Original language	English
Article number	092112
Journal	Applied Physics Letters
Volume	96
Issue number	9
DOIs	https://doi.org/10.1063/1.3294329
Publication status	Published - 2010 Mar 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{df774e793d8e4c7f8c7202e79fc96c47,

title = "Current fluctuations in three-dimensionally stacked Si nanocrystals thin films",

abstract = "In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.",

author = "Xin Zhou and Ken Uchida and Shunri Oda",

year = "2010",

month = mar,

day = "19",

doi = "10.1063/1.3294329",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

AU - Zhou, Xin

AU - Uchida, Ken

AU - Oda, Shunri

PY - 2010/3/19

Y1 - 2010/3/19

N2 - In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.

AB - In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.

UR - http://www.scopus.com/inward/record.url?scp=77949407792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949407792&partnerID=8YFLogxK

U2 - 10.1063/1.3294329

DO - 10.1063/1.3294329

M3 - Article

AN - SCOPUS:77949407792

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 092112

ER -