Abstract
In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.
| Original language | English |
|---|---|
| Article number | 092112 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2010 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Current fluctuations in three-dimensionally stacked Si nanocrystals thin films. / Zhou, Xin; Uchida, Ken; Oda, Shunri.
In: Applied Physics Letters, Vol. 96, No. 9, 092112, 2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Current fluctuations in three-dimensionally stacked Si nanocrystals thin films
AU - Zhou, Xin
AU - Uchida, Ken
AU - Oda, Shunri
PY - 2010
Y1 - 2010
N2 - In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.
AB - In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.
UR - http://www.scopus.com/inward/record.url?scp=77949407792&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77949407792&partnerID=8YFLogxK
U2 - 10.1063/1.3294329
DO - 10.1063/1.3294329
M3 - Article
AN - SCOPUS:77949407792
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
M1 - 092112
ER -