TY - JOUR
T1 - Current-induced magnetization switching using an electrically insulating spin-torque generator
AU - An, Hongyu
AU - Ohno, Takeo
AU - Kanno, Yusuke
AU - Kageyama, Yuito
AU - Monnai, Yasuaki
AU - Maki, Hideyuki
AU - Shi, Ji
AU - Ando, Kazuya
N1 - Funding Information:
This work was supported by Japan Society for the Promotion of Science (JSPS) KAKENHI grant nos. 26220604 and 26103004; PRESTO-JST "Innovative nano-electronics through interdisciplinary collaboration among material, device and system layers" grant nos. 13415036, JPMJPR1323, and JPMJPR1325; the Mizuho Foundation for the Promotion of Sciences; JSPS Core-to-Core Program; and Spintronics Research Network of Japan (Spin-RNJ). H.A. acknowledges the support from the JSPS Fellowship (nos. P17066 and 17F17066). T.O. thanks S. Samukawa for fruitful discussion on the plasma technique. Author contributions: H.A. and T.O. fabricated the devices and collected the data. H.A., T.O., Y. Kanno, Y. Kageyama, and Y.M. analyzed the data. K.A., T.O., H.M., and J.S. designed the experiments and developed the explanation. K.A., T.O., and H.A. wrote the manuscript. All authors discussed the results and reviewed the manuscript. H.A. was responsible for all the figures in the main text and the Supplementary Materials. Competing interests: The authors declare that they have no competing interests. Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.
Publisher Copyright:
Copyright © 2018 The Authors.
PY - 2018/2/23
Y1 - 2018/2/23
N2 - Current-induced magnetization switching through spin-orbit torques is the fundamental building block of spinorbitronics, which promises high-performance, low-power memory and logic devices. The spin-orbit torques generally arise from spin-orbit coupling of heavy metals. However, even in a heterostructure where a metallic magnet is sandwiched by two different insulators, a nonzero spin-orbit torque is expected because of the broken inversion symmetry; an electrical insulator can be a source of the spin-orbit torques. We demonstrate current-induced magnetization switching using an insulator. We show that oxygen incorporation into the most widely used spintronic material, Pt, turns the heavy metal into an electrically insulating generator of the spin-orbit torques, which enables the electrical switching of perpendicular magnetization in a ferrimagnet sandwiched by insulating oxides. We also show that the spin-orbit torques generated from the Pt oxide can be controlled electrically through voltage-driven oxygen migration. These findings open a route toward energy-efficient, voltage-programmable spin-orbit devices based on insulating metal oxides.
AB - Current-induced magnetization switching through spin-orbit torques is the fundamental building block of spinorbitronics, which promises high-performance, low-power memory and logic devices. The spin-orbit torques generally arise from spin-orbit coupling of heavy metals. However, even in a heterostructure where a metallic magnet is sandwiched by two different insulators, a nonzero spin-orbit torque is expected because of the broken inversion symmetry; an electrical insulator can be a source of the spin-orbit torques. We demonstrate current-induced magnetization switching using an insulator. We show that oxygen incorporation into the most widely used spintronic material, Pt, turns the heavy metal into an electrically insulating generator of the spin-orbit torques, which enables the electrical switching of perpendicular magnetization in a ferrimagnet sandwiched by insulating oxides. We also show that the spin-orbit torques generated from the Pt oxide can be controlled electrically through voltage-driven oxygen migration. These findings open a route toward energy-efficient, voltage-programmable spin-orbit devices based on insulating metal oxides.
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U2 - 10.1126/sciadv.aar2250
DO - 10.1126/sciadv.aar2250
M3 - Article
C2 - 29507887
AN - SCOPUS:85044759570
SN - 2375-2548
VL - 4
JO - Science advances
JF - Science advances
IS - 2
M1 - eaar2250
ER -