@inproceedings{da25bcd4d8f046f4b635e18643ac37e1,
title = "Current-injection lasing in T-shaped GaAs/AlGaAs quantum-wire lasers",
abstract = "Current-injection T-shaped GaAs/AlGaAs quantum wires lasers have been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy. Continuous single-mode operation at photon energy of ∼1.5 eV has been demonstrated between 30 K up to 70 K from laser diodes with high-reflectivity coating on both cleaved facets. The lowest threshold current (Ith) of 0.27 mA has been achieved at 30K, which are attributed to the high quality of the 2D confined structure and hence very low internal losses of the optical cavities.",
keywords = "Low threshold current, Quantum wire lasers",
author = "Liu, {Shu Man} and Masahiro Yoshita and Makoto Okano and Hidefumi Akiyama and Pfeiffer, {Loren N.} and West, {Ken W.}",
year = "2007",
doi = "10.1063/1.2730163",
language = "English",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "861--862",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}