Current-injection lasing in T-shaped GaAs/AlGaAs quantum-wire lasers

Shu Man Liu, Masahiro Yoshita, Makoto Okano, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current-injection T-shaped GaAs/AlGaAs quantum wires lasers have been fabricated by a cleaved-edge overgrowth method with molecular beam epitaxy. Continuous single-mode operation at photon energy of ∼1.5 eV has been demonstrated between 30 K up to 70 K from laser diodes with high-reflectivity coating on both cleaved facets. The lowest threshold current (Ith) of 0.27 mA has been achieved at 30K, which are attributed to the high quality of the 2D confined structure and hence very low internal losses of the optical cavities.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages861-862
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • Low threshold current
  • Quantum wire lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Liu, S. M., Yoshita, M., Okano, M., Akiyama, H., Pfeiffer, L. N., & West, K. W. (2007). Current-injection lasing in T-shaped GaAs/AlGaAs quantum-wire lasers. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 861-862). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730163