Current-injection T-shaped quantum wire lasers with perpendicular doping layers operating at 100 K

Makoto Okano, Shu man Liu, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrated lasing from current-injection T-shaped GaAs/AlGaAs quantum wire (T-wire) lasers with perpendicular p- and n-doping layers. The T-wire laser showed lasing between 5 and 110 K, and showed the optimal threshold current of 2.1 mA and differential quantum efficiency of 0.9% at 100 K. In microscopic-EL imaging measurements, we observed the emissions from the outside of optical core region, which indicated overflow of holes from the active region.

Original languageEnglish
Pages (from-to)1947-1949
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number6
DOIs
Publication statusPublished - 2008 Apr
Externally publishedYes

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Keywords

  • Carrier injection
  • Laser diode
  • Microscopic-EL imaging
  • Quantum wire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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