Current status of heteroepitaxy of CVD diamond

Tetsuya Suzuki, A. Argoitia

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Epitaxial growth of chemical vapor deposited (CVD) diamond on non-diamond substrates such as c-BN, SiC, BeO, Cu, Ni, and graphite has been the subject of intense effort. It has been confirmed that diamond can be grown epitaxially, ou c-BN single crystals, especially on the boron-terminated surfaces. However, the limitation of the small size of c-BN particles has prevented further development for practical purposes. Recently, highly oriented particles and films have been observed on the {100} planes of β-SiC substrates by the bias-enhanced microwave method. Further, the 〈111〉-oriented particles have been also reported on the {0001} surface of α-SiC which is equivalent in surface structure to the {111} surface of β-SiC. The 〈111〉-oriented particles have been also observed on the {0001} planes of BeO and highly oriented pyrolytic graphite. In this paper, the current status of heteroepitaxy of CVD diamond is summarized and discussed based on crystallographic considerations.

Original languageEnglish
Pages (from-to)239-254
Number of pages16
JournalPhysica Status Solidi (A) Applied Research
Volume154
Issue number1
Publication statusPublished - 1996 Mar

Fingerprint

Diamond
Epitaxial growth
Diamonds
Graphite
diamonds
Vapors
vapors
Boron
Substrates
Surface structure
pyrolytic graphite
Microwaves
Single crystals
boron
graphite
microwaves
single crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Current status of heteroepitaxy of CVD diamond. / Suzuki, Tetsuya; Argoitia, A.

In: Physica Status Solidi (A) Applied Research, Vol. 154, No. 1, 03.1996, p. 239-254.

Research output: Contribution to journalArticle

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