Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications

Mohd Fairuz Budiman, Xuan Yu Wang, Chi Hsien Huang, Rikako Tsukamoto, Toshiyuki Kaizu, Makoto Igarashi, Pierre Andre Mortemousque, Yoshitaka Okada, Akihiro Murayama, Kohei M Itoh, Yuzo Ohno, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A series of damage-free fabrication processes for a two-dimensional array of sub-10-nm GaAs nanodiscs was developed by using bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, a hydrogen-radical treatment was used to remove the native oxide on the GaAs surface, and then neutral beam oxidation (NBO) was used to form a hydrophilic 1-nm-thick GaAs oxide (GaAs-NBO) film. The two-dimensional array of ferritins (protein including a 7-nm-diameter iron core) can be arranged well on hydrophilic GaAs-NBO film. The ferritin protein shell was removed using an oxygen-radical treatment at a low temperature of 280°C without thermal damage to the GaAs. Then, the neutral beam etched the the GaAs to form defect-free nanodisc structure of using the iron core as an etching mask. Finally, the iron oxide core was removed by wet etching with diluted hydrogen chloride and the fabrication process was completed without inflicting any damage to the GaAs. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼7 nm, a height of ∼10 nm, a high taper angle of 88°, and a quantum dot density of more than 7×10 11 cm -2 was successfully fabricated without causing any damage to the GaAs.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2675-2678
Number of pages4
DOIs
Publication statusPublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011 Jun 192011 Jun 24

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period11/6/1911/6/24

Fingerprint

Etching
Solar cells
Oxidation
Semiconductor quantum dots
Iron
Proteins
Fabrication
Hydrogen
Defects
Oxides
Wet etching
Iron oxides
Masks
Photoluminescence
Oxygen
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Budiman, M. F., Wang, X. Y., Huang, C. H., Tsukamoto, R., Kaizu, T., Igarashi, M., ... Samukawa, S. (2011). Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2675-2678). [6186499] https://doi.org/10.1109/PVSC.2011.6186499

Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications. / Budiman, Mohd Fairuz; Wang, Xuan Yu; Huang, Chi Hsien; Tsukamoto, Rikako; Kaizu, Toshiyuki; Igarashi, Makoto; Mortemousque, Pierre Andre; Okada, Yoshitaka; Murayama, Akihiro; Itoh, Kohei M; Ohno, Yuzo; Samukawa, Seiji.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 2675-2678 6186499.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Budiman, MF, Wang, XY, Huang, CH, Tsukamoto, R, Kaizu, T, Igarashi, M, Mortemousque, PA, Okada, Y, Murayama, A, Itoh, KM, Ohno, Y & Samukawa, S 2011, Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6186499, pp. 2675-2678, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 11/6/19. https://doi.org/10.1109/PVSC.2011.6186499
Budiman MF, Wang XY, Huang CH, Tsukamoto R, Kaizu T, Igarashi M et al. Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 2675-2678. 6186499 https://doi.org/10.1109/PVSC.2011.6186499
Budiman, Mohd Fairuz ; Wang, Xuan Yu ; Huang, Chi Hsien ; Tsukamoto, Rikako ; Kaizu, Toshiyuki ; Igarashi, Makoto ; Mortemousque, Pierre Andre ; Okada, Yoshitaka ; Murayama, Akihiro ; Itoh, Kohei M ; Ohno, Yuzo ; Samukawa, Seiji. / Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications. Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. pp. 2675-2678
@inproceedings{eb582dc210724e5bb7ee0f8e090c3f1d,
title = "Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications",
abstract = "A series of damage-free fabrication processes for a two-dimensional array of sub-10-nm GaAs nanodiscs was developed by using bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, a hydrogen-radical treatment was used to remove the native oxide on the GaAs surface, and then neutral beam oxidation (NBO) was used to form a hydrophilic 1-nm-thick GaAs oxide (GaAs-NBO) film. The two-dimensional array of ferritins (protein including a 7-nm-diameter iron core) can be arranged well on hydrophilic GaAs-NBO film. The ferritin protein shell was removed using an oxygen-radical treatment at a low temperature of 280°C without thermal damage to the GaAs. Then, the neutral beam etched the the GaAs to form defect-free nanodisc structure of using the iron core as an etching mask. Finally, the iron oxide core was removed by wet etching with diluted hydrogen chloride and the fabrication process was completed without inflicting any damage to the GaAs. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼7 nm, a height of ∼10 nm, a high taper angle of 88°, and a quantum dot density of more than 7×10 11 cm -2 was successfully fabricated without causing any damage to the GaAs.",
author = "Budiman, {Mohd Fairuz} and Wang, {Xuan Yu} and Huang, {Chi Hsien} and Rikako Tsukamoto and Toshiyuki Kaizu and Makoto Igarashi and Mortemousque, {Pierre Andre} and Yoshitaka Okada and Akihiro Murayama and Itoh, {Kohei M} and Yuzo Ohno and Seiji Samukawa",
year = "2011",
doi = "10.1109/PVSC.2011.6186499",
language = "English",
isbn = "9781424499656",
pages = "2675--2678",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

}

TY - GEN

T1 - Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications

AU - Budiman, Mohd Fairuz

AU - Wang, Xuan Yu

AU - Huang, Chi Hsien

AU - Tsukamoto, Rikako

AU - Kaizu, Toshiyuki

AU - Igarashi, Makoto

AU - Mortemousque, Pierre Andre

AU - Okada, Yoshitaka

AU - Murayama, Akihiro

AU - Itoh, Kohei M

AU - Ohno, Yuzo

AU - Samukawa, Seiji

PY - 2011

Y1 - 2011

N2 - A series of damage-free fabrication processes for a two-dimensional array of sub-10-nm GaAs nanodiscs was developed by using bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, a hydrogen-radical treatment was used to remove the native oxide on the GaAs surface, and then neutral beam oxidation (NBO) was used to form a hydrophilic 1-nm-thick GaAs oxide (GaAs-NBO) film. The two-dimensional array of ferritins (protein including a 7-nm-diameter iron core) can be arranged well on hydrophilic GaAs-NBO film. The ferritin protein shell was removed using an oxygen-radical treatment at a low temperature of 280°C without thermal damage to the GaAs. Then, the neutral beam etched the the GaAs to form defect-free nanodisc structure of using the iron core as an etching mask. Finally, the iron oxide core was removed by wet etching with diluted hydrogen chloride and the fabrication process was completed without inflicting any damage to the GaAs. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼7 nm, a height of ∼10 nm, a high taper angle of 88°, and a quantum dot density of more than 7×10 11 cm -2 was successfully fabricated without causing any damage to the GaAs.

AB - A series of damage-free fabrication processes for a two-dimensional array of sub-10-nm GaAs nanodiscs was developed by using bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, a hydrogen-radical treatment was used to remove the native oxide on the GaAs surface, and then neutral beam oxidation (NBO) was used to form a hydrophilic 1-nm-thick GaAs oxide (GaAs-NBO) film. The two-dimensional array of ferritins (protein including a 7-nm-diameter iron core) can be arranged well on hydrophilic GaAs-NBO film. The ferritin protein shell was removed using an oxygen-radical treatment at a low temperature of 280°C without thermal damage to the GaAs. Then, the neutral beam etched the the GaAs to form defect-free nanodisc structure of using the iron core as an etching mask. Finally, the iron oxide core was removed by wet etching with diluted hydrogen chloride and the fabrication process was completed without inflicting any damage to the GaAs. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼7 nm, a height of ∼10 nm, a high taper angle of 88°, and a quantum dot density of more than 7×10 11 cm -2 was successfully fabricated without causing any damage to the GaAs.

UR - http://www.scopus.com/inward/record.url?scp=84861047500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861047500&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2011.6186499

DO - 10.1109/PVSC.2011.6186499

M3 - Conference contribution

AN - SCOPUS:84861047500

SN - 9781424499656

SP - 2675

EP - 2678

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

ER -