Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies

Z. Lj Petrović, Z. M. Raspopović, V. D. Stojanović, J. V. Jovanović, G. Malović, T. Makabe, J. de Urquijo

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

We review techniques to prepare, evaluate and apply sets of cross section and transport data for negative ions that are required for the modeling of collisional non-equilibrium plasmas used for processing of microelectronic circuits. We collect and discuss the transport coefficients and cross section sets. We have compiled data for negative ions in CF4 and CF4-related negative ions in rare gases. In addition, we consider data for F- and CF3 - in rare gases. Furthermore, we analyze the cross sections of halogen negative ions in rare gases and other molecules. This is followed by the data for SF6 related ions in SF6 and in rare gases. The cross section for scattering of O- in O2 has been derived from the transport data and used to make calculations of the transport properties. Finally we give a brief discussion of the availability of the data for H- ions in H2. We have derived cross sections in several cases but the basic aim is to show the basic features of transport coefficients. In particular we discuss the need to represent properly some details such as the non-conservative nature of transport coefficients and the anisotropy of diffusion. Application of approximate theories and representations of cross sections are also discussed.

Original languageEnglish
Pages (from-to)6619-6640
Number of pages22
JournalApplied Surface Science
Volume253
Issue number16
DOIs
Publication statusPublished - 2007 Jun 15

Fingerprint

Noble Gases
nanotechnology
Inert gases
Nanotechnology
negative ions
integrated circuits
Integrated circuits
Negative ions
Gases
rare gases
cross sections
transport properties
gases
Ions
Halogens
Microelectronics
Transport properties
collisional plasmas
nonequilibrium plasmas
Anisotropy

Keywords

  • Halogen ions
  • Hydrogen
  • Molecular ions
  • Monte Carlo
  • Negative ions
  • Oxygen
  • Plasma modeling
  • Plasma processing
  • SF
  • Swarm data
  • Transport coefficients

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Petrović, Z. L., Raspopović, Z. M., Stojanović, V. D., Jovanović, J. V., Malović, G., Makabe, T., & de Urquijo, J. (2007). Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies. Applied Surface Science, 253(16), 6619-6640. https://doi.org/10.1016/j.apsusc.2007.02.005

Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies. / Petrović, Z. Lj; Raspopović, Z. M.; Stojanović, V. D.; Jovanović, J. V.; Malović, G.; Makabe, T.; de Urquijo, J.

In: Applied Surface Science, Vol. 253, No. 16, 15.06.2007, p. 6619-6640.

Research output: Contribution to journalArticle

Petrović, ZL, Raspopović, ZM, Stojanović, VD, Jovanović, JV, Malović, G, Makabe, T & de Urquijo, J 2007, 'Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies', Applied Surface Science, vol. 253, no. 16, pp. 6619-6640. https://doi.org/10.1016/j.apsusc.2007.02.005
Petrović, Z. Lj ; Raspopović, Z. M. ; Stojanović, V. D. ; Jovanović, J. V. ; Malović, G. ; Makabe, T. ; de Urquijo, J. / Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies. In: Applied Surface Science. 2007 ; Vol. 253, No. 16. pp. 6619-6640.
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