Defect studies for the development of nano-scale silicon diffusion simulators

Masashi Uematsu, Yasuo Shimizu, K. M. Itoh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Fabrication of the next generation silicon devices requires fundamental understanding of defect interactions that are characteristic of nano-scale device processing. Because a variety of intrinsic and extrinsic defects generated at surfaces and interfaces can easily diffuse and reach the active regions in the nano-scale devices, it becomes crucial to understand the transient and non-equilibrium behaviors of defect interactions related to nano-scale fabrications. In order to identify what types of kinetics and reactions are relevant to nano-processing, diffusion in silicon and silicon oxide is studied using isotopically controlled silicon heterostructures. Our experiments probing the effect of interfaces on impurity and silicon self-diffusion in silicon dioxide, silicon self-diffusion in silicon, and implanted-impurity and silicon interactions are reviewed. Then quantitative models based on such experimental studies are presented and how they will be utilized in the construction of diffusion simulators is discussed.

Original languageEnglish
Pages (from-to)511-518
Number of pages8
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - 2007 Dec 15

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Keywords

  • Defects
  • Diffusion
  • Interface
  • Nano-process
  • Silicon
  • Silicon oxide
  • Simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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