Defects for quantum information processing in silicon

Eisuke Abe, Kohei M. Itoh

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this chapter, we discuss defects in silicon, primarily focusing on phosphorus donors, from the viewpoint of quantum information processing. We start with a historical perspective on our understanding of the limits to information processing. In doing so, we illuminate why we are so excited about the recent experimental challenges to realize silicon-based quantum computers. After reviewing the spin physics of donors in silicon, we discuss the coherence properties of donor electron and nuclear spins, and evaluate their feasibilities as carriers of quantum information, quantum bits. Recent developments in coherent control of single donor spins in silicon nanoelectronic devices are then outlined.

Original languageEnglish
Title of host publicationDefects in Advanced Electronic Materials and Novel Low Dimensional Structures
PublisherElsevier
Pages241-263
Number of pages23
ISBN (Electronic)9780081020531
ISBN (Print)9780081020548
DOIs
Publication statusPublished - 2018 Jan 1

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Keywords

  • Electron spin resonance
  • Nuclear magnetic resonance
  • Phosphorus donors in silicon
  • Silicon quantum computer

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Abe, E., & Itoh, K. M. (2018). Defects for quantum information processing in silicon. In Defects in Advanced Electronic Materials and Novel Low Dimensional Structures (pp. 241-263). Elsevier. https://doi.org/10.1016/B978-0-08-102053-1.00009-0