Defects for quantum information processing in silicon

Eisuke Abe; Kohei M. Itoh

doi:10.1016/B978-0-08-102053-1.00009-0

Defects for quantum information processing in silicon

Eisuke Abe, Kohei M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

In this chapter, we discuss defects in silicon, primarily focusing on phosphorus donors, from the viewpoint of quantum information processing. We start with a historical perspective on our understanding of the limits to information processing. In doing so, we illuminate why we are so excited about the recent experimental challenges to realize silicon-based quantum computers. After reviewing the spin physics of donors in silicon, we discuss the coherence properties of donor electron and nuclear spins, and evaluate their feasibilities as carriers of quantum information, quantum bits. Recent developments in coherent control of single donor spins in silicon nanoelectronic devices are then outlined.

Original language	English
Title of host publication	Defects in Advanced Electronic Materials and Novel Low Dimensional Structures
Publisher	Elsevier
Pages	241-263
Number of pages	23
ISBN (Electronic)	9780081020531
ISBN (Print)	9780081020548
DOIs	https://doi.org/10.1016/B978-0-08-102053-1.00009-0
Publication status	Published - 2018 Jan 1

Keywords

Electron spin resonance
Nuclear magnetic resonance
Phosphorus donors in silicon
Silicon quantum computer

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

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10.1016/B978-0-08-102053-1.00009-0

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@inbook{3fa7ad0709054c0a837e1d5221da774c,

title = "Defects for quantum information processing in silicon",

abstract = "In this chapter, we discuss defects in silicon, primarily focusing on phosphorus donors, from the viewpoint of quantum information processing. We start with a historical perspective on our understanding of the limits to information processing. In doing so, we illuminate why we are so excited about the recent experimental challenges to realize silicon-based quantum computers. After reviewing the spin physics of donors in silicon, we discuss the coherence properties of donor electron and nuclear spins, and evaluate their feasibilities as carriers of quantum information, quantum bits. Recent developments in coherent control of single donor spins in silicon nanoelectronic devices are then outlined.",

keywords = "Electron spin resonance, Nuclear magnetic resonance, Phosphorus donors in silicon, Silicon quantum computer",

author = "Eisuke Abe and Itoh, {Kohei M.}",

year = "2018",

month = jan,

day = "1",

doi = "10.1016/B978-0-08-102053-1.00009-0",

language = "English",

isbn = "9780081020548",

pages = "241--263",

booktitle = "Defects in Advanced Electronic Materials and Novel Low Dimensional Structures",

publisher = "Elsevier",

}

TY - CHAP

T1 - Defects for quantum information processing in silicon

AU - Abe, Eisuke

AU - Itoh, Kohei M.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this chapter, we discuss defects in silicon, primarily focusing on phosphorus donors, from the viewpoint of quantum information processing. We start with a historical perspective on our understanding of the limits to information processing. In doing so, we illuminate why we are so excited about the recent experimental challenges to realize silicon-based quantum computers. After reviewing the spin physics of donors in silicon, we discuss the coherence properties of donor electron and nuclear spins, and evaluate their feasibilities as carriers of quantum information, quantum bits. Recent developments in coherent control of single donor spins in silicon nanoelectronic devices are then outlined.

AB - In this chapter, we discuss defects in silicon, primarily focusing on phosphorus donors, from the viewpoint of quantum information processing. We start with a historical perspective on our understanding of the limits to information processing. In doing so, we illuminate why we are so excited about the recent experimental challenges to realize silicon-based quantum computers. After reviewing the spin physics of donors in silicon, we discuss the coherence properties of donor electron and nuclear spins, and evaluate their feasibilities as carriers of quantum information, quantum bits. Recent developments in coherent control of single donor spins in silicon nanoelectronic devices are then outlined.

KW - Electron spin resonance

KW - Nuclear magnetic resonance

KW - Phosphorus donors in silicon

KW - Silicon quantum computer

UR - http://www.scopus.com/inward/record.url?scp=85080819076&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85080819076&partnerID=8YFLogxK

U2 - 10.1016/B978-0-08-102053-1.00009-0

DO - 10.1016/B978-0-08-102053-1.00009-0

M3 - Chapter

AN - SCOPUS:85080819076

SN - 9780081020548

SP - 241

EP - 263

BT - Defects in Advanced Electronic Materials and Novel Low Dimensional Structures

PB - Elsevier

ER -

Defects for quantum information processing in silicon

Abstract

Keywords

ASJC Scopus subject areas

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