Deformation in mono-crystalline silicon caused by high speed single-point micro-cutting

A. Q. Biddut, J. Yan, L. C. Zhang, T. Ohta, T. Kuriyagawa, B. Shaun

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

This paper investigates the deformation in monocrystalline silicon subjected to singlepoint cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

Original languageEnglish
Title of host publicationKey Engineering Materials
PublisherTrans Tech Publications Ltd
Pages347-350
Number of pages4
ISBN (Print)9780878493388
DOIs
Publication statusPublished - 2009
Externally publishedYes

Publication series

NameKey Engineering Materials
Volume407-408
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Deformation
  • Dislocation
  • High speed
  • Nano-cutting
  • Phase transformation
  • Silicon
  • Single-point

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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