Deformation in mono-crystalline silicon caused by high speed single-point micro-cutting

A. Q. Biddut, Jiwang Yan, L. C. Zhang, T. Ohta, T. Kuriyagawa, B. Shaun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper investigates the deformation in monocrystalline silicon subjected to singlepoint cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalKey Engineering Materials
Volume407-408
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

Silicon
Crystalline materials
Raman spectroscopy
Monocrystalline silicon
Transmission electron microscopy

Keywords

  • Deformation
  • Dislocation
  • High speed
  • Nano-cutting
  • Phase transformation
  • Silicon
  • Single-point

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Deformation in mono-crystalline silicon caused by high speed single-point micro-cutting. / Biddut, A. Q.; Yan, Jiwang; Zhang, L. C.; Ohta, T.; Kuriyagawa, T.; Shaun, B.

In: Key Engineering Materials, Vol. 407-408, 2009, p. 347-350.

Research output: Contribution to journalArticle

Biddut, A. Q. ; Yan, Jiwang ; Zhang, L. C. ; Ohta, T. ; Kuriyagawa, T. ; Shaun, B. / Deformation in mono-crystalline silicon caused by high speed single-point micro-cutting. In: Key Engineering Materials. 2009 ; Vol. 407-408. pp. 347-350.
@article{76f152f022184e2caae246c7aa010ed4,
title = "Deformation in mono-crystalline silicon caused by high speed single-point micro-cutting",
abstract = "This paper investigates the deformation in monocrystalline silicon subjected to singlepoint cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.",
keywords = "Deformation, Dislocation, High speed, Nano-cutting, Phase transformation, Silicon, Single-point",
author = "Biddut, {A. Q.} and Jiwang Yan and Zhang, {L. C.} and T. Ohta and T. Kuriyagawa and B. Shaun",
year = "2009",
doi = "10.4028/www.scientific.net/KEM.407-408.347",
language = "English",
volume = "407-408",
pages = "347--350",
journal = "Key Engineering Materials",
issn = "1013-9826",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Deformation in mono-crystalline silicon caused by high speed single-point micro-cutting

AU - Biddut, A. Q.

AU - Yan, Jiwang

AU - Zhang, L. C.

AU - Ohta, T.

AU - Kuriyagawa, T.

AU - Shaun, B.

PY - 2009

Y1 - 2009

N2 - This paper investigates the deformation in monocrystalline silicon subjected to singlepoint cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

AB - This paper investigates the deformation in monocrystalline silicon subjected to singlepoint cutting with the cutting speed up to 46.78 m/s, the depth of cut of 2 μm, and the feed rate of 5 and 30 μm/rev. Raman spectroscopy and transmission electron microscopy were used to characterize the subsurface damages. It was found that the increase of either the feed rate or cutting speed increases the thickness of amorphous layer and penetration depth of dislocations. At the feed rate of 30 μm/rev and cutting speed of 12.48 m/s, a new dislocation system was initiated. An unknown peak was detected by Raman spectroscopy, which may indicate an unknown Si phase.

KW - Deformation

KW - Dislocation

KW - High speed

KW - Nano-cutting

KW - Phase transformation

KW - Silicon

KW - Single-point

UR - http://www.scopus.com/inward/record.url?scp=68149150069&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68149150069&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.407-408.347

DO - 10.4028/www.scientific.net/KEM.407-408.347

M3 - Article

VL - 407-408

SP - 347

EP - 350

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

ER -