Degenerate layers in epitaxial ZnO films grown on sapphire substrates

H. Tampo; A. Yamada; P. Fons; H. Shibata; K. Matsubara; K. Iwata; S. Niki; K. Nakahara; H. Takasu

doi:10.1063/1.1758295

Degenerate layers in epitaxial ZnO films grown on sapphire substrates

H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwata, S. Niki, K. Nakahara, H. Takasu

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

High-quality ZnO films were grown with a carrier concentration of 7.5×10¹⁶ cm^-3 and a mobility of 132 cm²/V s at RT using a nitrogen-doped and vacuum-annealed buffer layer. Untreated and vacuum-annealed low-temperature (LT) buffer layers exhibited degenerate behavior which in turn effects the electrical properties of undoped ZnO films. Nitrogen-doped and vacuum-annealed buffer layers displayed little degenerate behavior and were found to enhance the electrical properties of undoped ZnO films grown on them. The dominant residual donor energy of 110 meV was found to be different.

Original language	English
Pages (from-to)	4412-4414
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	22
DOIs	https://doi.org/10.1063/1.1758295
Publication status	Published - 2004 May 31
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Tampo, H.

AU - Yamada, A.

AU - Fons, P.

AU - Shibata, H.

AU - Matsubara, K.

AU - Iwata, K.

AU - Niki, S.

AU - Nakahara, K.

AU - Takasu, H.

PY - 2004/5/31

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N2 - High-quality ZnO films were grown with a carrier concentration of 7.5×1016 cm-3 and a mobility of 132 cm2/V s at RT using a nitrogen-doped and vacuum-annealed buffer layer. Untreated and vacuum-annealed low-temperature (LT) buffer layers exhibited degenerate behavior which in turn effects the electrical properties of undoped ZnO films. Nitrogen-doped and vacuum-annealed buffer layers displayed little degenerate behavior and were found to enhance the electrical properties of undoped ZnO films grown on them. The dominant residual donor energy of 110 meV was found to be different.

AB - High-quality ZnO films were grown with a carrier concentration of 7.5×1016 cm-3 and a mobility of 132 cm2/V s at RT using a nitrogen-doped and vacuum-annealed buffer layer. Untreated and vacuum-annealed low-temperature (LT) buffer layers exhibited degenerate behavior which in turn effects the electrical properties of undoped ZnO films. Nitrogen-doped and vacuum-annealed buffer layers displayed little degenerate behavior and were found to enhance the electrical properties of undoped ZnO films grown on them. The dominant residual donor energy of 110 meV was found to be different.

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Degenerate layers in epitaxial ZnO films grown on sapphire substrates

Abstract

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