High-quality ZnO films were grown with a carrier concentration of 7.5×1016 cm-3 and a mobility of 132 cm2/V s at RT using a nitrogen-doped and vacuum-annealed buffer layer. Untreated and vacuum-annealed low-temperature (LT) buffer layers exhibited degenerate behavior which in turn effects the electrical properties of undoped ZnO films. Nitrogen-doped and vacuum-annealed buffer layers displayed little degenerate behavior and were found to enhance the electrical properties of undoped ZnO films grown on them. The dominant residual donor energy of 110 meV was found to be different.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 May 31|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)