TY - JOUR
T1 - Degradation mechanism of perovskite CH3NH3PbI3 diode devices studied by electroluminescence and photoluminescence imaging spectroscopy
AU - Okano, Makoto
AU - Endo, Masaru
AU - Wakamiya, Atsushi
AU - Yoshita, Masahiro
AU - Akiyama, Hidefumi
AU - Kanemitsu, Yoshihiko
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/10/1
Y1 - 2015/10/1
N2 - We investigate the degradation behavior of non-sealed perovskite CH3NH3PbI3 diode devices in air at room temperature by means of electroluminescence (EL) and photoluminescence (PL) imaging techniques. From the comparison of these images, we determine that the spatial fluctuation of the EL intensity is mainly due to fluctuations in the luminescence efficiency of the perovskite layer itself. By applying a constant voltage for tens of minutes, the EL intensity decreases gradually. It is observed that the temporal evolution of the EL intensity is governed by the degradation of the perovskite layer and the carrier injection at the interface.
AB - We investigate the degradation behavior of non-sealed perovskite CH3NH3PbI3 diode devices in air at room temperature by means of electroluminescence (EL) and photoluminescence (PL) imaging techniques. From the comparison of these images, we determine that the spatial fluctuation of the EL intensity is mainly due to fluctuations in the luminescence efficiency of the perovskite layer itself. By applying a constant voltage for tens of minutes, the EL intensity decreases gradually. It is observed that the temporal evolution of the EL intensity is governed by the degradation of the perovskite layer and the carrier injection at the interface.
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U2 - 10.7567/APEX.8.102302
DO - 10.7567/APEX.8.102302
M3 - Article
AN - SCOPUS:84943328894
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 10
M1 - 102302
ER -