Degradation mechanism of perovskite CH3NH3PbI3 diode devices studied by electroluminescence and photoluminescence imaging spectroscopy

Makoto Okano; Masaru Endo; Atsushi Wakamiya; Masahiro Yoshita; Hidefumi Akiyama; Yoshihiko Kanemitsu

doi:10.7567/APEX.8.102302

Degradation mechanism of perovskite CH3NH3PbI3 diode devices studied by electroluminescence and photoluminescence imaging spectroscopy

Makoto Okano, Masaru Endo, Atsushi Wakamiya, Masahiro Yoshita, Hidefumi Akiyama, Yoshihiko Kanemitsu

Department of Physics

Research output: Contribution to journal › Article

23 Citations (Scopus)

Abstract

We investigate the degradation behavior of non-sealed perovskite CH3NH3PbI3 diode devices in air at room temperature by means of electroluminescence (EL) and photoluminescence (PL) imaging techniques. From the comparison of these images, we determine that the spatial fluctuation of the EL intensity is mainly due to fluctuations in the luminescence efficiency of the perovskite layer itself. By applying a constant voltage for tens of minutes, the EL intensity decreases gradually. It is observed that the temporal evolution of the EL intensity is governed by the degradation of the perovskite layer and the carrier injection at the interface.

Original language	English
Article number	102302
Journal	Applied Physics Express
Volume	8
Issue number	10
DOIs	https://doi.org/10.7567/APEX.8.102302
Publication status	Published - 2015 Oct 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Okano, M., Endo, M., Wakamiya, A., Yoshita, M., Akiyama, H., & Kanemitsu, Y. (2015). Degradation mechanism of perovskite CH3NH3PbI3 diode devices studied by electroluminescence and photoluminescence imaging spectroscopy. Applied Physics Express, 8(10), [102302]. https://doi.org/10.7567/APEX.8.102302

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