Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3

Takahisa Tanaka, Yuya Kurosawa, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda, Ken Uchida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of greater than 1019 cm-3, which is in contrast to the zero ionization energy (ED) in bulk Si at the same ND. From the comparison of experimentally observed and theoretically calculated ED, we attribute the deionization to the suppression of metal-insulator transition in highly doped nanoscale semiconductors in addition to the quantum confinement and the dielectric mismatch, which greatly increase ED in low-doped nanoscale semiconductors. Thus, for nanoscale transistors, ND should be higher than that estimated from bulk Si dopant properties in order to reduce their resistivity by the metal-insulator transition.

Original languageEnglish
Pages (from-to)1143-1149
Number of pages7
JournalNano Letters
Volume16
Issue number2
DOIs
Publication statusPublished - 2016 Feb 10

Fingerprint

deionization
Silicon
Doping (additives)
Metal insulator transition
Ionization potential
silicon
Semiconductor materials
insulators
ionization
metals
Quantum confinement
transistors
retarding
Transistors
electrical resistivity
energy

Keywords

  • Ionization energy
  • metal-insulator transition
  • nanostructure
  • phosphorus
  • silicon
  • transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Tanaka, T., Kurosawa, Y., Kadotani, N., Takahashi, T., Oda, S., & Uchida, K. (2016). Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3 Nano Letters, 16(2), 1143-1149. https://doi.org/10.1021/acs.nanolett.5b04406

Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3 . / Tanaka, Takahisa; Kurosawa, Yuya; Kadotani, Naotoshi; Takahashi, Tsunaki; Oda, Shunri; Uchida, Ken.

In: Nano Letters, Vol. 16, No. 2, 10.02.2016, p. 1143-1149.

Research output: Contribution to journalArticle

Tanaka, T, Kurosawa, Y, Kadotani, N, Takahashi, T, Oda, S & Uchida, K 2016, 'Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3 ', Nano Letters, vol. 16, no. 2, pp. 1143-1149. https://doi.org/10.1021/acs.nanolett.5b04406
Tanaka, Takahisa ; Kurosawa, Yuya ; Kadotani, Naotoshi ; Takahashi, Tsunaki ; Oda, Shunri ; Uchida, Ken. / Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3 In: Nano Letters. 2016 ; Vol. 16, No. 2. pp. 1143-1149.
@article{f33c1d1a900c4327b4a5fe44a4e44cc4,
title = "Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3",
abstract = "Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of greater than 1019 cm-3, which is in contrast to the zero ionization energy (ED) in bulk Si at the same ND. From the comparison of experimentally observed and theoretically calculated ED, we attribute the deionization to the suppression of metal-insulator transition in highly doped nanoscale semiconductors in addition to the quantum confinement and the dielectric mismatch, which greatly increase ED in low-doped nanoscale semiconductors. Thus, for nanoscale transistors, ND should be higher than that estimated from bulk Si dopant properties in order to reduce their resistivity by the metal-insulator transition.",
keywords = "Ionization energy, metal-insulator transition, nanostructure, phosphorus, silicon, transistor",
author = "Takahisa Tanaka and Yuya Kurosawa and Naotoshi Kadotani and Tsunaki Takahashi and Shunri Oda and Ken Uchida",
year = "2016",
month = "2",
day = "10",
doi = "10.1021/acs.nanolett.5b04406",
language = "English",
volume = "16",
pages = "1143--1149",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "2",

}

TY - JOUR

T1 - Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3

AU - Tanaka, Takahisa

AU - Kurosawa, Yuya

AU - Kadotani, Naotoshi

AU - Takahashi, Tsunaki

AU - Oda, Shunri

AU - Uchida, Ken

PY - 2016/2/10

Y1 - 2016/2/10

N2 - Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of greater than 1019 cm-3, which is in contrast to the zero ionization energy (ED) in bulk Si at the same ND. From the comparison of experimentally observed and theoretically calculated ED, we attribute the deionization to the suppression of metal-insulator transition in highly doped nanoscale semiconductors in addition to the quantum confinement and the dielectric mismatch, which greatly increase ED in low-doped nanoscale semiconductors. Thus, for nanoscale transistors, ND should be higher than that estimated from bulk Si dopant properties in order to reduce their resistivity by the metal-insulator transition.

AB - Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of greater than 1019 cm-3, which is in contrast to the zero ionization energy (ED) in bulk Si at the same ND. From the comparison of experimentally observed and theoretically calculated ED, we attribute the deionization to the suppression of metal-insulator transition in highly doped nanoscale semiconductors in addition to the quantum confinement and the dielectric mismatch, which greatly increase ED in low-doped nanoscale semiconductors. Thus, for nanoscale transistors, ND should be higher than that estimated from bulk Si dopant properties in order to reduce their resistivity by the metal-insulator transition.

KW - Ionization energy

KW - metal-insulator transition

KW - nanostructure

KW - phosphorus

KW - silicon

KW - transistor

UR - http://www.scopus.com/inward/record.url?scp=84958206669&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958206669&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b04406

DO - 10.1021/acs.nanolett.5b04406

M3 - Article

AN - SCOPUS:84958206669

VL - 16

SP - 1143

EP - 1149

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 2

ER -