Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3

Takahisa Tanaka, Yuya Kurosawa, Naotoshi Kadotani, Tsunaki Takahashi, Shunri Oda, Ken Uchida

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2 Citations (Scopus)

Abstract

Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of greater than 1019 cm-3, which is in contrast to the zero ionization energy (ED) in bulk Si at the same ND. From the comparison of experimentally observed and theoretically calculated ED, we attribute the deionization to the suppression of metal-insulator transition in highly doped nanoscale semiconductors in addition to the quantum confinement and the dielectric mismatch, which greatly increase ED in low-doped nanoscale semiconductors. Thus, for nanoscale transistors, ND should be higher than that estimated from bulk Si dopant properties in order to reduce their resistivity by the metal-insulator transition.

Original languageEnglish
Pages (from-to)1143-1149
Number of pages7
JournalNano Letters
Volume16
Issue number2
DOIs
Publication statusPublished - 2016 Feb 10

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Keywords

  • Ionization energy
  • metal-insulator transition
  • nanostructure
  • phosphorus
  • silicon
  • transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Tanaka, T., Kurosawa, Y., Kadotani, N., Takahashi, T., Oda, S., & Uchida, K. (2016). Deionization of Dopants in Silicon Nanofilms even with Donor Concentration of Greater than 1019 cm-3 Nano Letters, 16(2), 1143-1149. https://doi.org/10.1021/acs.nanolett.5b04406