Delay time component of InGaAs MOSFET caused by dynamic source resistance

Masayuki Yamada, Ken Uchida, Yasuyuki Miyamoto

Research output: Contribution to journalArticle

Abstract

The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.

Original languageEnglish
Pages (from-to)419-422
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE97-C
Issue number5
DOIs
Publication statusPublished - 2014

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Keywords

  • Delay component
  • Dynamic source resistance
  • InGaAs
  • MOSFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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