Delay time component of InGaAs MOSFET caused by dynamic source resistance

Masayuki Yamada, Ken Uchida, Yasuyuki Miyamoto

    Research output: Contribution to journalArticle

    Abstract

    The delay time component (τs) of an InGaAs MOSFET caused by dynamic source resistance is discussed. On the basis of the relationship between the current density (J) and the dynamic source resistance (rs), the value of rs is proportional to 1/J with some offset at low current densities, whereas the offset becomes smaller in a region of high current density. The value of τs depends on the current in a way similar to rs. Because the offset in the high-current-density region is proportional to the square root of the effective mass, an InGaAs MOSFET with a small mass has a shorter rs than a Si MOSFET.

    Original languageEnglish
    Pages (from-to)419-422
    Number of pages4
    JournalIEICE Transactions on Electronics
    VolumeE97-C
    Issue number5
    DOIs
    Publication statusPublished - 2014 May

    Keywords

    • Delay component
    • Dynamic source resistance
    • InGaAs
    • MOSFET

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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