Densification of SiO2 gel films by synchrotron radiation and its dependence on photon energy

Hiroaki Imai; Koichi Awazu; Masaru Yasumori; Hiroshi Hirashima; Hideo Onuki

Densification of SiO₂ gel films by synchrotron radiation and its dependence on photon energy

Hiroaki Imai, Koichi Awazu, Masaru Yasumori, Hiroshi Hirashima, Hideo Onuki

Department of Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The interaction of synchrotron radiation (SR) emitted from a polarizing undulator with SiO₂ gel films was investigated by elipsometry and infrared spectroscopy. The photon energy in SR was varied in the range of 6.4-17.8 eV using an Onuki-type undulator in order to study the energy dependence of the interaction. We found that an increase of refractive index, a decrease of thickness of the films and a loss of OH groups were induced by photons with energies above approx.9 eV although any changes were not observed with photons below approx.7 eV. These results suggest that SiO₂ gel films are densified through electronic processes stimulated by the energetic photons.

Original language	English
Pages (from-to)	39-43
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	375
Publication status	Published - 1995 Jan 1
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: 1994 Nov 27 → 1994 Dec 2

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Densification of SiO2 gel films by synchrotron radiation and its dependence on photon energy",

abstract = "The interaction of synchrotron radiation (SR) emitted from a polarizing undulator with SiO2 gel films was investigated by elipsometry and infrared spectroscopy. The photon energy in SR was varied in the range of 6.4-17.8 eV using an Onuki-type undulator in order to study the energy dependence of the interaction. We found that an increase of refractive index, a decrease of thickness of the films and a loss of OH groups were induced by photons with energies above approx.9 eV although any changes were not observed with photons below approx.7 eV. These results suggest that SiO2 gel films are densified through electronic processes stimulated by the energetic photons.",

author = "Hiroaki Imai and Koichi Awazu and Masaru Yasumori and Hiroshi Hirashima and Hideo Onuki",

year = "1995",

month = jan,

day = "1",

language = "English",

volume = "375",

pages = "39--43",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 27-11-1994 Through 02-12-1994",

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TY - JOUR

T1 - Densification of SiO2 gel films by synchrotron radiation and its dependence on photon energy

AU - Imai, Hiroaki

AU - Awazu, Koichi

AU - Yasumori, Masaru

AU - Hirashima, Hiroshi

AU - Onuki, Hideo

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The interaction of synchrotron radiation (SR) emitted from a polarizing undulator with SiO2 gel films was investigated by elipsometry and infrared spectroscopy. The photon energy in SR was varied in the range of 6.4-17.8 eV using an Onuki-type undulator in order to study the energy dependence of the interaction. We found that an increase of refractive index, a decrease of thickness of the films and a loss of OH groups were induced by photons with energies above approx.9 eV although any changes were not observed with photons below approx.7 eV. These results suggest that SiO2 gel films are densified through electronic processes stimulated by the energetic photons.

AB - The interaction of synchrotron radiation (SR) emitted from a polarizing undulator with SiO2 gel films was investigated by elipsometry and infrared spectroscopy. The photon energy in SR was varied in the range of 6.4-17.8 eV using an Onuki-type undulator in order to study the energy dependence of the interaction. We found that an increase of refractive index, a decrease of thickness of the films and a loss of OH groups were induced by photons with energies above approx.9 eV although any changes were not observed with photons below approx.7 eV. These results suggest that SiO2 gel films are densified through electronic processes stimulated by the energetic photons.

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M3 - Conference article

AN - SCOPUS:0029236850

SN - 0272-9172

VL - 375

SP - 39

EP - 43

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 27 November 1994 through 2 December 1994

ER -

Densification of SiO₂ gel films by synchrotron radiation and its dependence on photon energy

Abstract

ASJC Scopus subject areas

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