Abstract
Effects of intrinsic defects on defect formation by excimer-laser irradiation were examined in synthetic silica glasses prepared by different methods. In samples containing oxygen-deficient centers (ODCs), laser-induced E centers were stable at room temperature. In contrast, in samples heat treated in H2 atmosphere, in which almost all ODCs changed into Si-H bonds, the induced-E- center concentration increased by about two orders of magnitude, and the resulting E centers were unstable, decaying at room temperature. We thus conclude that the formation efficiency of E centers from Si-H bonds is much higher than that of ODCs and that the induced-E centers recombine with radiolytic molecular H2 to restore Si-H bonds. It is suggested that a trace amount of Si-H bonds plays an essential role in defect creation and annihilation in OH-containing silica glasses.
| Original language | English |
|---|---|
| Pages (from-to) | 4812-4818 |
| Number of pages | 7 |
| Journal | Physical Review B |
| Volume | 44 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 1991 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Dependence of defects induced by excimer laser on intrinsic structural defects in synthetic silica glasses. / Imai, Hiroaki; Arai, Kazuo; Hosono, Hideo; Abe, Yoshihiro; Arai, Takehiko; Imagawa, Hiroshi.
In: Physical Review B, Vol. 44, No. 10, 1991, p. 4812-4818.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dependence of defects induced by excimer laser on intrinsic structural defects in synthetic silica glasses
AU - Imai, Hiroaki
AU - Arai, Kazuo
AU - Hosono, Hideo
AU - Abe, Yoshihiro
AU - Arai, Takehiko
AU - Imagawa, Hiroshi
PY - 1991
Y1 - 1991
N2 - Effects of intrinsic defects on defect formation by excimer-laser irradiation were examined in synthetic silica glasses prepared by different methods. In samples containing oxygen-deficient centers (ODCs), laser-induced E centers were stable at room temperature. In contrast, in samples heat treated in H2 atmosphere, in which almost all ODCs changed into Si-H bonds, the induced-E- center concentration increased by about two orders of magnitude, and the resulting E centers were unstable, decaying at room temperature. We thus conclude that the formation efficiency of E centers from Si-H bonds is much higher than that of ODCs and that the induced-E centers recombine with radiolytic molecular H2 to restore Si-H bonds. It is suggested that a trace amount of Si-H bonds plays an essential role in defect creation and annihilation in OH-containing silica glasses.
AB - Effects of intrinsic defects on defect formation by excimer-laser irradiation were examined in synthetic silica glasses prepared by different methods. In samples containing oxygen-deficient centers (ODCs), laser-induced E centers were stable at room temperature. In contrast, in samples heat treated in H2 atmosphere, in which almost all ODCs changed into Si-H bonds, the induced-E- center concentration increased by about two orders of magnitude, and the resulting E centers were unstable, decaying at room temperature. We thus conclude that the formation efficiency of E centers from Si-H bonds is much higher than that of ODCs and that the induced-E centers recombine with radiolytic molecular H2 to restore Si-H bonds. It is suggested that a trace amount of Si-H bonds plays an essential role in defect creation and annihilation in OH-containing silica glasses.
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U2 - 10.1103/PhysRevB.44.4812
DO - 10.1103/PhysRevB.44.4812
M3 - Article
AN - SCOPUS:0001656222
VL - 44
SP - 4812
EP - 4818
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 10
ER -