Dephasing processes in transport through two-level quantum dot

Y. Funabashi, K. Ohtsubo, Mikio Eto, K. Kawamura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Transport properties through a two-level quantum dot are studied using the Anderson Hamiltonian. Like the spin degeneracy, the orbital degrees of freedom in the quantum dot cause the Kondo effect and dephasing of conduction electrons transported through the dot. One feature of the model is the mixing oforbital states in the dot which occurs even if the Coulomb interaction is absent. This mixing deforms the density of states in the dot and suppresses the increment of the current caused by the Kondo effect. The dephasing processes are enhanced when the bias voltage is increased, but are insensitive to the mixing effect.

Original languageEnglish
Pages (from-to)1367-1371
Number of pages5
JournalSolid-State Electronics
Volume42
Issue number7-8
Publication statusPublished - 1998 Jul

Fingerprint

Kondo effect
Semiconductor quantum dots
quantum dots
Hamiltonians
Bias voltage
Coulomb interactions
conduction electrons
Transport properties
degrees of freedom
transport properties
orbitals
Electrons
causes
electric potential
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Funabashi, Y., Ohtsubo, K., Eto, M., & Kawamura, K. (1998). Dephasing processes in transport through two-level quantum dot. Solid-State Electronics, 42(7-8), 1367-1371.

Dephasing processes in transport through two-level quantum dot. / Funabashi, Y.; Ohtsubo, K.; Eto, Mikio; Kawamura, K.

In: Solid-State Electronics, Vol. 42, No. 7-8, 07.1998, p. 1367-1371.

Research output: Contribution to journalArticle

Funabashi, Y, Ohtsubo, K, Eto, M & Kawamura, K 1998, 'Dephasing processes in transport through two-level quantum dot', Solid-State Electronics, vol. 42, no. 7-8, pp. 1367-1371.
Funabashi Y, Ohtsubo K, Eto M, Kawamura K. Dephasing processes in transport through two-level quantum dot. Solid-State Electronics. 1998 Jul;42(7-8):1367-1371.
Funabashi, Y. ; Ohtsubo, K. ; Eto, Mikio ; Kawamura, K. / Dephasing processes in transport through two-level quantum dot. In: Solid-State Electronics. 1998 ; Vol. 42, No. 7-8. pp. 1367-1371.
@article{98efef1e335f4a00a216f95148435fb6,
title = "Dephasing processes in transport through two-level quantum dot",
abstract = "Transport properties through a two-level quantum dot are studied using the Anderson Hamiltonian. Like the spin degeneracy, the orbital degrees of freedom in the quantum dot cause the Kondo effect and dephasing of conduction electrons transported through the dot. One feature of the model is the mixing oforbital states in the dot which occurs even if the Coulomb interaction is absent. This mixing deforms the density of states in the dot and suppresses the increment of the current caused by the Kondo effect. The dephasing processes are enhanced when the bias voltage is increased, but are insensitive to the mixing effect.",
author = "Y. Funabashi and K. Ohtsubo and Mikio Eto and K. Kawamura",
year = "1998",
month = "7",
language = "English",
volume = "42",
pages = "1367--1371",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "7-8",

}

TY - JOUR

T1 - Dephasing processes in transport through two-level quantum dot

AU - Funabashi, Y.

AU - Ohtsubo, K.

AU - Eto, Mikio

AU - Kawamura, K.

PY - 1998/7

Y1 - 1998/7

N2 - Transport properties through a two-level quantum dot are studied using the Anderson Hamiltonian. Like the spin degeneracy, the orbital degrees of freedom in the quantum dot cause the Kondo effect and dephasing of conduction electrons transported through the dot. One feature of the model is the mixing oforbital states in the dot which occurs even if the Coulomb interaction is absent. This mixing deforms the density of states in the dot and suppresses the increment of the current caused by the Kondo effect. The dephasing processes are enhanced when the bias voltage is increased, but are insensitive to the mixing effect.

AB - Transport properties through a two-level quantum dot are studied using the Anderson Hamiltonian. Like the spin degeneracy, the orbital degrees of freedom in the quantum dot cause the Kondo effect and dephasing of conduction electrons transported through the dot. One feature of the model is the mixing oforbital states in the dot which occurs even if the Coulomb interaction is absent. This mixing deforms the density of states in the dot and suppresses the increment of the current caused by the Kondo effect. The dephasing processes are enhanced when the bias voltage is increased, but are insensitive to the mixing effect.

UR - http://www.scopus.com/inward/record.url?scp=0032121015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032121015&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032121015

VL - 42

SP - 1367

EP - 1371

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7-8

ER -