Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Y. Shimizu, Y. Kawamura, M. Uematsu, M. Tomita, T. Kinno, N. Okada, M. Kato, H. Uchida, M. Takahashi, H. Ito, H. Ishikawa, Y. Ohji, H. Takamizawa, Y. Nagai, Kohei M Itoh

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

Original languageEnglish
Article number036102
JournalJournal of Applied Physics
Volume109
Issue number3
DOIs
Publication statusPublished - 2011 Feb 1

Fingerprint

microscopy
probes
silicon
lasers
atoms
secondary ion mass spectrometry
isotopes
high resolution
decay

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures. / Shimizu, Y.; Kawamura, Y.; Uematsu, M.; Tomita, M.; Kinno, T.; Okada, N.; Kato, M.; Uchida, H.; Takahashi, M.; Ito, H.; Ishikawa, H.; Ohji, Y.; Takamizawa, H.; Nagai, Y.; Itoh, Kohei M.

In: Journal of Applied Physics, Vol. 109, No. 3, 036102, 01.02.2011.

Research output: Contribution to journalArticle

Shimizu, Y, Kawamura, Y, Uematsu, M, Tomita, M, Kinno, T, Okada, N, Kato, M, Uchida, H, Takahashi, M, Ito, H, Ishikawa, H, Ohji, Y, Takamizawa, H, Nagai, Y & Itoh, KM 2011, 'Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures', Journal of Applied Physics, vol. 109, no. 3, 036102. https://doi.org/10.1063/1.3544496
Shimizu, Y. ; Kawamura, Y. ; Uematsu, M. ; Tomita, M. ; Kinno, T. ; Okada, N. ; Kato, M. ; Uchida, H. ; Takahashi, M. ; Ito, H. ; Ishikawa, H. ; Ohji, Y. ; Takamizawa, H. ; Nagai, Y. ; Itoh, Kohei M. / Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 3.
@article{d9a03ca14966468ca8ff39b8b72a6e92,
title = "Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures",
abstract = "We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.",
author = "Y. Shimizu and Y. Kawamura and M. Uematsu and M. Tomita and T. Kinno and N. Okada and M. Kato and H. Uchida and M. Takahashi and H. Ito and H. Ishikawa and Y. Ohji and H. Takamizawa and Y. Nagai and Itoh, {Kohei M}",
year = "2011",
month = "2",
day = "1",
doi = "10.1063/1.3544496",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

AU - Shimizu, Y.

AU - Kawamura, Y.

AU - Uematsu, M.

AU - Tomita, M.

AU - Kinno, T.

AU - Okada, N.

AU - Kato, M.

AU - Uchida, H.

AU - Takahashi, M.

AU - Ito, H.

AU - Ishikawa, H.

AU - Ohji, Y.

AU - Takamizawa, H.

AU - Nagai, Y.

AU - Itoh, Kohei M

PY - 2011/2/1

Y1 - 2011/2/1

N2 - We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

AB - We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

UR - http://www.scopus.com/inward/record.url?scp=79951830541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951830541&partnerID=8YFLogxK

U2 - 10.1063/1.3544496

DO - 10.1063/1.3544496

M3 - Article

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 036102

ER -