Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures

Y. Shimizu, Y. Kawamura, M. Uematsu, M. Tomita, T. Kinno, N. Okada, M. Kato, H. Uchida, M. Takahashi, H. Ito, H. Ishikawa, Y. Ohji, H. Takamizawa, Y. Nagai, K. M. Itoh

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Abstract

We report on a direct comparison of the depth and lateral resolution of the current state-of-the-art laser-assisted atom probe microscopy analysis of single-crystalline silicon. The isotopic heterostructures composed of 5-15 nm-thick 28Si- and 30Si-enriched layers were measured to reconstruct three-dimensional images of 28Si and 30Si stable isotope distributions in the surface perpendicular and parallel directions for the analysis of the depth and lateral resolution, respectively. The decay length experimentally obtained for the lateral direction is only about twice longer than in the direction, meaning that the lateral resolution is higher than obtained by secondary ion mass spectrometry.

Original languageEnglish
Article number036102
JournalJournal of Applied Physics
Volume109
Issue number3
DOIs
Publication statusPublished - 2011 Feb 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Shimizu, Y., Kawamura, Y., Uematsu, M., Tomita, M., Kinno, T., Okada, N., Kato, M., Uchida, H., Takahashi, M., Ito, H., Ishikawa, H., Ohji, Y., Takamizawa, H., Nagai, Y., & Itoh, K. M. (2011). Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructures. Journal of Applied Physics, 109(3), [036102]. https://doi.org/10.1063/1.3544496