Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry

Motomu Takatsu, Takami Adachihara, Toshihiko Mori, Yuji Awano, Naoki Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have designed and developed a new read/write operation mode one-transistor-SRAM-cell and its peripheral circuits using InGaAs multi-emitter resonant tunneling hot electron transistors (ME-RHETs). A new mode for write operation, based on the monostable-bistable transition of the resonant tunneling emitter and the bias-dependent current gain, is proposed to improve operating margins. To reduce the standby power consumption of a memory cell and increase current driving capability for peripheral circuits simultaneously, the ME-RHET structure is designed so as to use the first resonant state for the memory cell and the second resonant state for peripheral circuits. We have also designed a full set of SRAM components using the ME-RHETs, including cell array, decoder and a read/write circuit. We have succeeded in fabricating these circuits and demonstrated the correct read/write operation of the cell array combined with read/write circuits at 77K.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages219-222
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

Other

Other1999 IEEE International Devices Meeting (IEDM)
CityWashington, DC, USA
Period99/12/599/12/8

Fingerprint

Resonant tunneling
Hot electrons
Static random access storage
Transistors
Demonstrations
Networks (circuits)
Computer peripheral equipment
Data storage equipment
Electron transitions
Electric power utilization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Takatsu, M., Adachihara, T., Mori, T., Awano, Y., & Yokoyama, N. (1999). Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry. In Technical Digest - International Electron Devices Meeting (pp. 219-222). IEEE.

Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry. / Takatsu, Motomu; Adachihara, Takami; Mori, Toshihiko; Awano, Yuji; Yokoyama, Naoki.

Technical Digest - International Electron Devices Meeting. IEEE, 1999. p. 219-222.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takatsu, M, Adachihara, T, Mori, T, Awano, Y & Yokoyama, N 1999, Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 219-222, 1999 IEEE International Devices Meeting (IEDM), Washington, DC, USA, 99/12/5.
Takatsu M, Adachihara T, Mori T, Awano Y, Yokoyama N. Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry. In Technical Digest - International Electron Devices Meeting. IEEE. 1999. p. 219-222
Takatsu, Motomu ; Adachihara, Takami ; Mori, Toshihiko ; Awano, Yuji ; Yokoyama, Naoki. / Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry. Technical Digest - International Electron Devices Meeting. IEEE, 1999. pp. 219-222
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