Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry

Motomu Takatsu, Takami Adachihara, Toshihiko Mori, Yuji Awano, Naoki Yokoyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have designed and developed a new read/write operation mode one-transistor-SRAM-cell and its peripheral circuits using InGaAs multi-emitter resonant tunneling hot electron transistors (ME-RHETs). A new mode for write operation, based on the monostable-bistable transition of the resonant tunneling emitter and the bias-dependent current gain, is proposed to improve operating margins. To reduce the standby power consumption of a memory cell and increase current driving capability for peripheral circuits simultaneously, the ME-RHET structure is designed so as to use the first resonant state for the memory cell and the second resonant state for peripheral circuits. We have also designed a full set of SRAM components using the ME-RHETs, including cell array, decoder and a read/write circuit. We have succeeded in fabricating these circuits and demonstrated the correct read/write operation of the cell array combined with read/write circuits at 77K.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages219-222
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

Other

Other1999 IEEE International Devices Meeting (IEDM)
CityWashington, DC, USA
Period99/12/599/12/8

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Takatsu, M., Adachihara, T., Mori, T., Awano, Y., & Yokoyama, N. (1999). Design and demonstration of new operation mode multi-emitter resonant tunneling hot electron transistors for one-transistor-SRAM-cell and peripheral logic circuitry. In Technical Digest - International Electron Devices Meeting (pp. 219-222). IEEE.