TY - JOUR
T1 - Design of an optofluidic diffusion sensor by transient grating using dielectrophoresis
AU - Kamata, Makoto
AU - Taguchi, Yoshihiro
AU - Nagasaka, Yuji
N1 - Funding Information:
JSPS KAKENHI Grant Numbers JP18H01388, and JP17J04445; Keio Leading-edge Laboratory of Science and Technology (KLL) specified research projects.
Funding Information:
JSPS KAKENHI Grant Numbers JP18H01388, and JP17J04445; Keio Leading-edge Laboratory of Science and Technology (KLL) specified research projects. The fabrication was performed in the clean room at the Global Nano Micro Technology Business Incubation Center (NANOBIC), Kawasaki, Japan with support from the Academic Consortium for Nano and Micro Fabrication of Four Universities (Keio University, Waseda University, Tokyo Institute of Technology, and the University of Tokyo).
PY - 2018/6/25
Y1 - 2018/6/25
N2 - An optofluidic diffusion sensor using laser-induced dielectrophoresis in a device with a sputtered a-Si:H layer is presented. Diffusion sensors enabling high-speed measurement have important potential uses as bio-sensors and for quantitative analysis of nano-sized products. The present sensor was developed for measurement in a few seconds by optic observations of the sample diffusion from transient grating formed by laser-induced dielectrophoresis. As a photoconductive layer for the proposed device, we used a sputtered a-Si:H film. The optical (refractive index and extinction coefficient), structural (Raman and IR spectroscopy), and optoelectronic properties of this film, as well as its applicability to the proposed device are characterized. Nano-sized beads were measured by the fabricated device, and its performance as a diffusion sensor was validated.
AB - An optofluidic diffusion sensor using laser-induced dielectrophoresis in a device with a sputtered a-Si:H layer is presented. Diffusion sensors enabling high-speed measurement have important potential uses as bio-sensors and for quantitative analysis of nano-sized products. The present sensor was developed for measurement in a few seconds by optic observations of the sample diffusion from transient grating formed by laser-induced dielectrophoresis. As a photoconductive layer for the proposed device, we used a sputtered a-Si:H film. The optical (refractive index and extinction coefficient), structural (Raman and IR spectroscopy), and optoelectronic properties of this film, as well as its applicability to the proposed device are characterized. Nano-sized beads were measured by the fabricated device, and its performance as a diffusion sensor was validated.
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U2 - 10.1364/OE.26.016970
DO - 10.1364/OE.26.016970
M3 - Article
C2 - 30119514
AN - SCOPUS:85049036210
VL - 26
SP - 16970
EP - 16983
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 13
ER -