Design optimization of NEMS switches for suspended-gate single-electron transistor applications

Benjamin Pruvost, Ken Uchida, Hiroshi Mizuta, Shunri Oda

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The operation of nanoelectromechanical switches is investigated through simulation. A simple methodology based on a 1-D lumped model taking account of the Casimir effect is first proposed to determine a low-voltage actuation window for conventional cantilevers. Results show good agreement with 3-D simulation and prove to be helpful for systematic design. The conventional cantilever shape is then optimized to a cross-like design that is fully studied in a 3-D environment. Static and dynamic behaviors as well as effect of the oxide layer thickness are investigated with a view to suspended-gate single-electron transistor applications. The proposed structure successfully combines low actuation voltage and low power consumption, and it is shown that the switching speed is the limiting factor for the considered applications.

Original languageEnglish
Article number4711095
Pages (from-to)174-184
Number of pages11
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number2
DOIs
Publication statusPublished - 2009 Mar
Externally publishedYes

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Single electron transistors
NEMS
Switches
Electric potential
Electric power utilization
Oxides
Design optimization

Keywords

  • 1-D and 3-D modeling
  • Cantilever switch
  • Movable gate
  • Nanoelectromechanical system (NEMS)
  • Single-electron transistor (SET)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Design optimization of NEMS switches for suspended-gate single-electron transistor applications. / Pruvost, Benjamin; Uchida, Ken; Mizuta, Hiroshi; Oda, Shunri.

In: IEEE Transactions on Nanotechnology, Vol. 8, No. 2, 4711095, 03.2009, p. 174-184.

Research output: Contribution to journalArticle

Pruvost, Benjamin ; Uchida, Ken ; Mizuta, Hiroshi ; Oda, Shunri. / Design optimization of NEMS switches for suspended-gate single-electron transistor applications. In: IEEE Transactions on Nanotechnology. 2009 ; Vol. 8, No. 2. pp. 174-184.
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