Development of a polishing disc containing granulated fine abrasives

H. Nakamura, J. Yan, K. Syoji, Y. Wakamatsu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Polishing technology has provided the possibility of obtaining super smooth surfaces on semiconductor and other brittle materials for electronic and optical applications. In this study, a new manufacturing method for a polishing disc with fixed fine abrasive grains is proposed. This manufacturing method consists of three main processes. In the first process, an undiluted solution of abrasives is produced by adding some sodium alginate into the solution in which fine abrasive grains of SiO2, Al2O3 and Cr2O3 are dispersed. Next, by dropping the undiluted abrasive solution into a lactic acid calcium solution, the fine abrasive grains are granulated into spheres having diameters of 2-3 mm. In the second process, the granulated spheres are combined using the same undiluted abrasive solution as a binder. In the last process, the combined body of granulation spheres is dried up and formed by a lathe. The polishing disc produced by this method has a bulk density of 0.5 g/cm3, a Vickers hardness less than HV10. Observations using a scanning electron microscope show that the polishing disc has a high-density and homogeneous structure and the bonding strength is low. Experimental results indicate that the developed polishing disc can be used in high efficiency polishing for silicon wafers.

Original languageEnglish
Pages (from-to)257-262
Number of pages6
JournalKey Engineering Materials
Volume238-239
Publication statusPublished - 2003 Mar 13

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Keywords

  • Fixed abrasive
  • Granulated fine abrasive
  • Polishing
  • Polishing disc
  • Silicon wafer

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nakamura, H., Yan, J., Syoji, K., & Wakamatsu, Y. (2003). Development of a polishing disc containing granulated fine abrasives. Key Engineering Materials, 238-239, 257-262.