Device design for subthreshold slope and threshold voltage control in sub-100 nm fully-depleted SOI MOSFETs

Toshinori Numata, Ken Uchida, Junji Koga, Shin Ichi Takagi

    Research output: Contribution to conferencePaper

    14 Citations (Scopus)

    Abstract

    Device design issues regarding threshold voltage (Vth) control, short channel effects (SCE) and subthreshold slope are qantitatively studied for fully-depleted (FD) SOI MOSFETs under the sub-100 nm regime. As for the Vth adjustment method, the combination of back gate bias (Vg2) and gate work function (Φm) control is found to provide superior SCE, Vth fluctuation due to SOI thickness variation and current drive. As for the subthreshold slope (SS), on the other hand, the optimization of thickness and permittivity of buried oxides is a key issue. It is found that, when the gate length is less than 100 nm, SS has a minimum value at buried oxide thickness of around 40 nm, irrespective of SOI thickness. It is also shown that the reduction in the permittivity of buried oxides improves SS.

    Original languageEnglish
    Pages179-180
    Number of pages2
    DOIs
    Publication statusPublished - 2002 Jan 1
    EventIEEE International SOI Conference - Williamsburg, VA, United States
    Duration: 2002 Oct 72002 Oct 10

    Other

    OtherIEEE International SOI Conference
    CountryUnited States
    CityWilliamsburg, VA
    Period02/10/702/10/10

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'Device design for subthreshold slope and threshold voltage control in sub-100 nm fully-depleted SOI MOSFETs'. Together they form a unique fingerprint.

  • Cite this

    Numata, T., Uchida, K., Koga, J., & Takagi, S. I. (2002). Device design for subthreshold slope and threshold voltage control in sub-100 nm fully-depleted SOI MOSFETs. 179-180. Paper presented at IEEE International SOI Conference, Williamsburg, VA, United States. https://doi.org/10.1109/soi.2002.1044467