Abstract
We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.
| Original language | English |
|---|---|
| Pages (from-to) | 142-145 |
| Number of pages | 4 |
| Journal | Plasma Sources Science and Technology |
| Volume | 11 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2002 May |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
Cite this
Diagnostics of a wafer interface of a pulsed two-frequency capacitively coupled plasma for oxide etching by emission selected computerized tomography. / Fujita, Toshikazu; Makabe, Toshiaki.
In: Plasma Sources Science and Technology, Vol. 11, No. 2, 05.2002, p. 142-145.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Diagnostics of a wafer interface of a pulsed two-frequency capacitively coupled plasma for oxide etching by emission selected computerized tomography
AU - Fujita, Toshikazu
AU - Makabe, Toshiaki
PY - 2002/5
Y1 - 2002/5
N2 - We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.
AB - We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.
UR - http://www.scopus.com/inward/record.url?scp=0036576055&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036576055&partnerID=8YFLogxK
U2 - 10.1088/0963-0252/11/2/303
DO - 10.1088/0963-0252/11/2/303
M3 - Article
AN - SCOPUS:0036576055
VL - 11
SP - 142
EP - 145
JO - Plasma Sources Science and Technology
JF - Plasma Sources Science and Technology
SN - 0963-0252
IS - 2
ER -