Diagnostics of a wafer interface of a pulsed two-frequency capacitively coupled plasma for oxide etching by emission selected computerized tomography

Toshikazu Fujita, Toshiaki Makabe

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.

Original languageEnglish
Pages (from-to)142-145
Number of pages4
JournalPlasma Sources Science and Technology
Volume11
Issue number2
DOIs
Publication statusPublished - 2002 May

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tomography
etching
wafers
oxides
negative ions
excitation
charged particles
time measurement
microstructure
electrodes
configurations

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Condensed Matter Physics

Cite this

Diagnostics of a wafer interface of a pulsed two-frequency capacitively coupled plasma for oxide etching by emission selected computerized tomography. / Fujita, Toshikazu; Makabe, Toshiaki.

In: Plasma Sources Science and Technology, Vol. 11, No. 2, 05.2002, p. 142-145.

Research output: Contribution to journalArticle

@article{3ac6e9b7985b4833be774dba570df4bf,
title = "Diagnostics of a wafer interface of a pulsed two-frequency capacitively coupled plasma for oxide etching by emission selected computerized tomography",
abstract = "We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.",
author = "Toshikazu Fujita and Toshiaki Makabe",
year = "2002",
month = "5",
doi = "10.1088/0963-0252/11/2/303",
language = "English",
volume = "11",
pages = "142--145",
journal = "Plasma Sources Science and Technology",
issn = "0963-0252",
publisher = "IOP Publishing Ltd.",
number = "2",

}

TY - JOUR

T1 - Diagnostics of a wafer interface of a pulsed two-frequency capacitively coupled plasma for oxide etching by emission selected computerized tomography

AU - Fujita, Toshikazu

AU - Makabe, Toshiaki

PY - 2002/5

Y1 - 2002/5

N2 - We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.

AB - We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.

UR - http://www.scopus.com/inward/record.url?scp=0036576055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036576055&partnerID=8YFLogxK

U2 - 10.1088/0963-0252/11/2/303

DO - 10.1088/0963-0252/11/2/303

M3 - Article

AN - SCOPUS:0036576055

VL - 11

SP - 142

EP - 145

JO - Plasma Sources Science and Technology

JF - Plasma Sources Science and Technology

SN - 0963-0252

IS - 2

ER -