Diagnostics of a wafer interface of a pulsed two-frequency capacitively coupled plasma for oxide etching by emission selected computerized tomography

Toshikazu Fujita, Toshiaki Makabe

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We have carried out emission selected computerized tomography time and space measurements of the absolute net production rate of Ar(2P1) in a pulsed capacitively coupled plasma for SiO2 etching pulsively sustained at 100 MHz and continuously biased at 500 kHz between electrodes in CF4/Ar and pure Ar at 25 mTorr. Double-layer formation by excessive negatively charged particles in the interface close to the wafer is experimentally estimated only at the wafer's anodic phases during the off-period of the plasma source as seen by the probed net excitation rate. The successive space and time configuration of the net excitation rate will support a sufficient capability to inject energetic negative ions to the biased wafer having microstructures and to neutralize the inner wall to be etched.

Original languageEnglish
Pages (from-to)142-145
Number of pages4
JournalPlasma Sources Science and Technology
Issue number2
Publication statusPublished - 2002 May 1


ASJC Scopus subject areas

  • Condensed Matter Physics

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