The properties of a mixture of argon and CF4 were studied. This mixture is used in plasma etching of SiO2 and more importantly its properties may be compared to those of the pure argon plasma to observe the effect of CF4 kinetics, especially the effect of the presence of negative ions. The experimental studies carried out serve as the basis for tests of theoretical models of inductively coupled plasma which are the foundation for computer aided design (CAD) and control of the next generation plasma devices that are being developed.
|Number of pages||9|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2000 Jan 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films