Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain

Takahisa Tanaka, Kohei M. Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ∼2X drain current enhancement by the 1% uniaxial tensile strain.

Original languageEnglish
Title of host publicationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages229-232
Number of pages4
ISBN (Electronic)9781479952885
DOIs
Publication statusPublished - 2014 Oct 20
Event2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan
Duration: 2014 Sep 92014 Sep 11

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
CountryJapan
CityYokohama
Period14/9/914/9/11

Keywords

  • MOSFET
  • nanowire
  • silicon
  • uniaxial strain

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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  • Cite this

    Tanaka, T., & Itoh, K. M. (2014). Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (pp. 229-232). [6931605] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2014.6931605