Dielectric relaxation and photo-electromotive force in Ge-Sb-Te/Si structures

R. A. Castro-Arata, M. A. Goryaev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dielectric properties and photovoltaic effect spectra in the compositions of amorphous layers GeSb2Te4 (GST 124), Ge2Sb2Te5 (GST 225) и GeSb4Te7 (GST 147) applied on the monocrystallic silicon surface are investigated. It is shown that with a change in the GST composition, both the dielectric capacitivity and the frequency at which the maximum dielectric loss is observed change. It was found that the value of the change in photo-electromotive force is different for different layers: on samples with GST 124, the influence of amorphous layers is by an order of magnitude greater than for GST 225, and by 3 orders of magnitude greater than for GST 147.

Original languageEnglish
Title of host publicationPHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology
EditorsPablo Albella, Maria Raposo, David Andrews, Paulo Ribeiro
PublisherSciTePress
Pages146-150
Number of pages5
ISBN (Electronic)9789897584015
Publication statusPublished - 2020 Jan 1
Externally publishedYes
Event8th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2020 - Valletta, Malta
Duration: 2020 Feb 272020 Feb 29

Publication series

NamePHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology

Conference

Conference8th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2020
CountryMalta
CityValletta
Period20/2/2720/2/29

Keywords

  • Dielectric Properties
  • Photovoltaic Effect
  • Structures Ge-Sb-Te/Si

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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