Dielectric relaxation in the GeSb2Te4phase-change material

Aleksei Kononov, Yuta Saito, Paul Fons, Junji Tominaga, Nadezhda Anisimova, Alexander Kolobov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dielectric relaxation in thin layers of amorphous and crystalline GeSb2Te4 was studied. A relaxation process associated with the manifestation of dipole-relaxation polarization is found. The appearance of dipoles is thought to be caused by the off-center location of Ge and Sb in cubic fragments of GeSb2Te4. The activation energies for relaxation processes were calculated to be Ea≈0.34 eV for amorphous and EC≈0.47 eV for crystalline GeSb2Te4.

Original languageEnglish
Title of host publicationProceedings of the XV International Conference "Physics of Dielectrics"
EditorsYuriy Gorokhovatsky, Dmitry Temnov, Viktoria Kapralova, Nicolay Sudar, Elena Velichko
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735440449
DOIs
Publication statusPublished - 2020 Dec 1
Event15th International Conference on Physics of Dielectrics, Dielectrics 2020 - St. Petersburg, Russian Federation
Duration: 2020 Oct 52020 Oct 8

Publication series

NameAIP Conference Proceedings
Volume2308
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference15th International Conference on Physics of Dielectrics, Dielectrics 2020
CountryRussian Federation
CitySt. Petersburg
Period20/10/520/10/8

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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