Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure: Spin photodetector

Kazuya Ando, M. Morikawa, T. Trypiniotis, Y. Fujikawa, C. H W Barnes, E. Saitoh

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers are generated by the illumination of circularly polarized light, which induces a pure-spin current in the Pt layer through the interface. The pure-spin current is converted into an electromotive force using the inverse spin-Hall effect (ISHE) in the Pt layer. The electromotive force due to the photoinduced ISHE was found to be proportional to the degree of circular polarization of the illuminated light outside the sample in spite of the presence of the Pt top layer, which is consistent with a calculation based on the analysis for light propagation in multilayer structures. This conversion of light-polarization information into electric voltage works at room temperature without bias voltage and magnetic fields, and thus can be used as a spin photodetector.

Original languageEnglish
Article number113902
JournalJournal of Applied Physics
Volume107
Issue number11
DOIs
Publication statusPublished - 2010 Jun 1

Fingerprint

hybrid structures
photometers
Hall effect
electric potential
polarization
electromotive forces
circular polarization
polarized light
laminates
illumination
propagation
room temperature
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure : Spin photodetector. / Ando, Kazuya; Morikawa, M.; Trypiniotis, T.; Fujikawa, Y.; Barnes, C. H W; Saitoh, E.

In: Journal of Applied Physics, Vol. 107, No. 11, 113902, 01.06.2010.

Research output: Contribution to journalArticle

@article{b8da567aae5c42b7ae36a8e919e879a9,
title = "Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure: Spin photodetector",
abstract = "The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers are generated by the illumination of circularly polarized light, which induces a pure-spin current in the Pt layer through the interface. The pure-spin current is converted into an electromotive force using the inverse spin-Hall effect (ISHE) in the Pt layer. The electromotive force due to the photoinduced ISHE was found to be proportional to the degree of circular polarization of the illuminated light outside the sample in spite of the presence of the Pt top layer, which is consistent with a calculation based on the analysis for light propagation in multilayer structures. This conversion of light-polarization information into electric voltage works at room temperature without bias voltage and magnetic fields, and thus can be used as a spin photodetector.",
author = "Kazuya Ando and M. Morikawa and T. Trypiniotis and Y. Fujikawa and Barnes, {C. H W} and E. Saitoh",
year = "2010",
month = "6",
day = "1",
doi = "10.1063/1.3418441",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure

T2 - Spin photodetector

AU - Ando, Kazuya

AU - Morikawa, M.

AU - Trypiniotis, T.

AU - Fujikawa, Y.

AU - Barnes, C. H W

AU - Saitoh, E.

PY - 2010/6/1

Y1 - 2010/6/1

N2 - The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers are generated by the illumination of circularly polarized light, which induces a pure-spin current in the Pt layer through the interface. The pure-spin current is converted into an electromotive force using the inverse spin-Hall effect (ISHE) in the Pt layer. The electromotive force due to the photoinduced ISHE was found to be proportional to the degree of circular polarization of the illuminated light outside the sample in spite of the presence of the Pt top layer, which is consistent with a calculation based on the analysis for light propagation in multilayer structures. This conversion of light-polarization information into electric voltage works at room temperature without bias voltage and magnetic fields, and thus can be used as a spin photodetector.

AB - The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers are generated by the illumination of circularly polarized light, which induces a pure-spin current in the Pt layer through the interface. The pure-spin current is converted into an electromotive force using the inverse spin-Hall effect (ISHE) in the Pt layer. The electromotive force due to the photoinduced ISHE was found to be proportional to the degree of circular polarization of the illuminated light outside the sample in spite of the presence of the Pt top layer, which is consistent with a calculation based on the analysis for light propagation in multilayer structures. This conversion of light-polarization information into electric voltage works at room temperature without bias voltage and magnetic fields, and thus can be used as a spin photodetector.

UR - http://www.scopus.com/inward/record.url?scp=77953645235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953645235&partnerID=8YFLogxK

U2 - 10.1063/1.3418441

DO - 10.1063/1.3418441

M3 - Article

AN - SCOPUS:77953645235

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113902

ER -