Direct deposition of silica films using silicon alkoxide solution

Junrok Oh, Hiroaki Imai, Hiroshi Hirashima

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Dense silica films were directly deposited on a substrate in basic solutions (∼pH 11) of tetraethoxysilane (TEOS) at temperatures <60°C. The film formation was observed through heterogeneous nucleation on a hydrophilic surface with the intermediate condition between gel formation and stable solution. The refractive index, the OH content and the hardness indicate that the structure of the deposited films are similar to that of sol-gel silica films calcined at 500°C. We suggest that the growth and the densification of the films occur simultaneously during the deposition in the solutions.

Original languageEnglish
Pages (from-to)91-97
Number of pages7
JournalJournal of Non-Crystalline Solids
Volume241
Issue number2-3
Publication statusPublished - 1998 Nov 2

Fingerprint

alkoxides
Silicon
silicon films
Silicon Dioxide
Silica
silicon dioxide
Silica Gel
silica gel
densification
Densification
Sol-gels
Refractive index
Nucleation
hardness
Gels
Hardness
nucleation
gels
refractivity
Polymers

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Direct deposition of silica films using silicon alkoxide solution. / Oh, Junrok; Imai, Hiroaki; Hirashima, Hiroshi.

In: Journal of Non-Crystalline Solids, Vol. 241, No. 2-3, 02.11.1998, p. 91-97.

Research output: Contribution to journalArticle

Oh, Junrok ; Imai, Hiroaki ; Hirashima, Hiroshi. / Direct deposition of silica films using silicon alkoxide solution. In: Journal of Non-Crystalline Solids. 1998 ; Vol. 241, No. 2-3. pp. 91-97.
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