Direct diameter-controlled growth of multiwall carbon nanotubes on nickel-suicide layer

Mizuhisa Nihei, Akio Kawabata, Yuji Awano

Research output: Contribution to journalArticlepeer-review

74 Citations (Scopus)


By using plasma-enhanced chemical vapor deposition (p-CVD), we grew vertically aligned multiwall carbon nanotubes (CNTs) directly on a nickel-suicide layer, which can be used as electrodes for metal-oxide-semiconductor field-effect transistors (MOSFETs). By using a nickel-suicide layer as a catalyst, the nanotube diameter became smaller than that possible with a nickel film catalyst. We suggest that Ni-silicide composition plays an important role in controlling the diameter of the nanotubes. To our knowledge, this is the first report on diameter-controlled vertically aligned CNT growth on catalytic metal-silicide substrates.

Original languageEnglish
Pages (from-to)L721-L723
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number6 B
Publication statusPublished - 2003 Jun 15
Externally publishedYes


  • Carbon nanotube
  • Interconnection
  • Nickel catalyst
  • Nickel-silicide
  • Plasma-enhanced CVD

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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