Direct evaluation of self-heating effects in bulk and ultra-thin BOX SOI MOSFETs using four-terminal gate resistance technique

Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    We demonstrate clear self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) MOSFETs for various SOI/buried oxide (BOX) thicknesses including ultra-thin 6 nm BOX, which was not detected by the ac conductance method, using the four-terminal gate resistance technique. We clarify that the SHE in bulk MOSFETs originates from the degradation of thermal conductivity in a heavily doped well region. The strong chip-temperature dependence of the SHE was observed only in bulk MOSFETs. As results of the chip temperature-dependent SHE of bulk devices and the SHE suppression by BOX thinning, the device temperature of ultra-thin BOX SOI MOSFETs is close to that of bulk MOSFETs at an elevated chip temperature, which suggests the thermal advantage of extremely thin BOX structures.

    Original languageEnglish
    Article number7469833
    Pages (from-to)365-373
    Number of pages9
    JournalIEEE Journal of the Electron Devices Society
    Volume4
    Issue number5
    DOIs
    Publication statusPublished - 2016 Sep

    Keywords

    • Self-heating effect
    • four-terminal gate resistance technique
    • ultra-thin BOX

    ASJC Scopus subject areas

    • Biotechnology
    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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