Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura, Kevin C.Y. Huang, Shruti V. Thombare, Shu Hu, Marika Gunji, Toyofumi Ishikawa, Mark L. Brongersma, Kohei M. Itoh, Paul C. McIntyre

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

Original languageEnglish
Article number035306
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number3
DOIs
Publication statusPublished - 2012 Jul 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Kawamura, Y., Huang, K. C. Y., Thombare, S. V., Hu, S., Gunji, M., Ishikawa, T., Brongersma, M. L., Itoh, K. M., & McIntyre, P. C. (2012). Direct-gap photoluminescence from germanium nanowires. Physical Review B - Condensed Matter and Materials Physics, 86(3), [035306]. https://doi.org/10.1103/PhysRevB.86.035306