Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura; Kevin C.Y. Huang; Shruti V. Thombare; Shu Hu; Marika Gunji; Toyofumi Ishikawa; Mark L. Brongersma; Kohei M. Itoh; Paul C. McIntyre

doi:10.1103/PhysRevB.86.035306

Direct-gap photoluminescence from germanium nanowires

Yoko Kawamura, Kevin C.Y. Huang, Shruti V. Thombare, Shu Hu, Marika Gunji, Toyofumi Ishikawa, Mark L. Brongersma, Kohei M. Itoh, Paul C. McIntyre

President

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

Original language	English
Article number	035306
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.86.035306
Publication status	Published - 2012 Jul 6

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.86.035306

Cite this

@article{6c37d9b19fc74df481ec6a4c48715747,

title = "Direct-gap photoluminescence from germanium nanowires",

abstract = "We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.",

author = "Yoko Kawamura and Huang, {Kevin C.Y.} and Thombare, {Shruti V.} and Shu Hu and Marika Gunji and Toyofumi Ishikawa and Brongersma, {Mark L.} and Itoh, {Kohei M.} and McIntyre, {Paul C.}",

year = "2012",

month = jul,

day = "6",

doi = "10.1103/PhysRevB.86.035306",

language = "English",

volume = "86",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Direct-gap photoluminescence from germanium nanowires

AU - Kawamura, Yoko

AU - Huang, Kevin C.Y.

AU - Thombare, Shruti V.

AU - Hu, Shu

AU - Gunji, Marika

AU - Ishikawa, Toyofumi

AU - Brongersma, Mark L.

AU - Itoh, Kohei M.

AU - McIntyre, Paul C.

PY - 2012/7/6

Y1 - 2012/7/6

N2 - We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

AB - We report observation of near-infrared photoluminescence from free-standing, vertically aligned germanium nanowires grown on a (111)-oriented silicon substrate. The energy of the photoluminescence peak is very close to that of the bulk crystalline germanium direct band gap. The intensity shows an approximately quadratic dependence on excitation laser power and decreases with decreasing temperature. The peak position exhibits a redshift with increasing laser power due to laser-induced heating of the wires. These observations indicate that the photoluminescence originates from the direct band-gap recombination in the germanium nanowires.

UR - http://www.scopus.com/inward/record.url?scp=84863675445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863675445&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.86.035306

DO - 10.1103/PhysRevB.86.035306

M3 - Article

AN - SCOPUS:84863675445

SN - 1098-0121

VL - 86

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 3

M1 - 035306

ER -

Direct-gap photoluminescence from germanium nanowires

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this