Direct observation of hexagonal boron nitride at the grain boundary of cubic boron nitride by high resolution electron microscopy

Wei Lie Zhou, Yuichi Ikuhara, Masao Murakawa, Syuichi Watanabe, Tetsuya Suzuki

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Cubic boron nitride (c-BN) film deposited on a Si substrate was observed by high resolution electron microscopy. Thin layers, 1-2 nm, of hexagonal boron nitride (h-BN) phase were often found at the boundaries of c-BN grains. The observed interplanar spacing was about 0.33 nm, which coincided with that of the (0002) plane of h-BN. The nucleation mechanism of c-BN film is briefly discussed based on the formation of the h-BN phase at the grain boundaries. The existence of the h-BN phase at the boundaries of c-BN grains may be the reason for the occurrence of compressive stress and cracks in c-BN thin films.

Original languageEnglish
Pages (from-to)3287
Number of pages1
JournalApplied Physics Letters
Volume66
Publication statusPublished - 1995
Externally publishedYes

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boron nitrides
electron microscopy
grain boundaries
high resolution
cracks
spacing
nucleation
occurrences
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct observation of hexagonal boron nitride at the grain boundary of cubic boron nitride by high resolution electron microscopy. / Zhou, Wei Lie; Ikuhara, Yuichi; Murakawa, Masao; Watanabe, Syuichi; Suzuki, Tetsuya.

In: Applied Physics Letters, Vol. 66, 1995, p. 3287.

Research output: Contribution to journalArticle

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AU - Suzuki, Tetsuya

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