Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO

Paul Fons, Hiroshi Tampo, Alexander V. Kolobov, Masataka Ohkubo, Shigeru Niki, Junji Tominaga, Roberta Carboni, Federico Boscherini, Stephan Friedrich

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123 Citations (Scopus)

Abstract

ZnO is a wide band gap, naturally n-type semiconductor with great promise for optoelectronic applications; the main obstacle yet to be overcome is p-type doping. Nitrogen, the most promising candidate currently being pursued as a dopant, has been predicted to preferentially incorporate into the ZnO lattice in the form of a N2- molecule at an O site when a plasma source is used, leading to compensation rather than p-type doping. We demonstrate this to be incorrect by using N K-edge x-ray absorption spectra and comparing them with first-principles calculations showing that nitrogen, in fact, incorporates substitutionally at O sites where it is expected to act as an acceptor. We also detect the formation of molecular nitrogen upon annealing. These results suggest that effective p-type doping of ZnO with N may be possible only for low-temperature growth processes.

Original languageEnglish
Article number045504
JournalPhysical review letters
Volume96
Issue number4
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Fons, P., Tampo, H., Kolobov, A. V., Ohkubo, M., Niki, S., Tominaga, J., Carboni, R., Boscherini, F., & Friedrich, S. (2006). Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO. Physical review letters, 96(4), [045504]. https://doi.org/10.1103/PhysRevLett.96.045504