Direct observation of subband structures in (110) pMOSFETs under high magnetic field

Impact of energy split between bands and effective masses on hole mobility

Tsunaki Takahashi, Gento Yamahata, Jun Ogi, Tetsuo Kodera, Shunri Oda, Ken Uchida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained from the Shubnikov-de Haas (SdH) oscillation analysis. It is demonstrated that mobility in the higher energy band is worse than that in the lower energy band, resulting in sharp mobility drop at higher surface carrier concentrations (Ns) and a clear hump in Id-Vg characteristics at low temperatures of less than 20 K. In order to further enhance mobility in (110) pFETs, the increase in the energy split between H and L bands is important.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09/12/709/12/9

Fingerprint

Hole mobility
hole mobility
Band structure
energy bands
Magnetic fields
magnetic fields
energy
Carrier transport
ultrahigh frequencies
Carrier concentration
Temperature
oscillations

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Takahashi, T., Yamahata, G., Ogi, J., Kodera, T., Oda, S., & Uchida, K. (2009). Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. In Technical Digest - International Electron Devices Meeting, IEDM [5424316] https://doi.org/10.1109/IEDM.2009.5424316

Direct observation of subband structures in (110) pMOSFETs under high magnetic field : Impact of energy split between bands and effective masses on hole mobility. / Takahashi, Tsunaki; Yamahata, Gento; Ogi, Jun; Kodera, Tetsuo; Oda, Shunri; Uchida, Ken.

Technical Digest - International Electron Devices Meeting, IEDM. 2009. 5424316.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takahashi, T, Yamahata, G, Ogi, J, Kodera, T, Oda, S & Uchida, K 2009, Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. in Technical Digest - International Electron Devices Meeting, IEDM., 5424316, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09/12/7. https://doi.org/10.1109/IEDM.2009.5424316
Takahashi T, Yamahata G, Ogi J, Kodera T, Oda S, Uchida K. Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. In Technical Digest - International Electron Devices Meeting, IEDM. 2009. 5424316 https://doi.org/10.1109/IEDM.2009.5424316
Takahashi, Tsunaki ; Yamahata, Gento ; Ogi, Jun ; Kodera, Tetsuo ; Oda, Shunri ; Uchida, Ken. / Direct observation of subband structures in (110) pMOSFETs under high magnetic field : Impact of energy split between bands and effective masses on hole mobility. Technical Digest - International Electron Devices Meeting, IEDM. 2009.
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