TY - GEN
T1 - Direct observation of subband structures in (110) pMOSFETs under high magnetic field
T2 - 2009 International Electron Devices Meeting, IEDM 2009
AU - Takahashi, Tsunaki
AU - Yamahata, Gento
AU - Ogi, Jun
AU - Kodera, Tetsuo
AU - Oda, Shunri
AU - Uchida, Ken
PY - 2009/12/1
Y1 - 2009/12/1
N2 - The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained from the Shubnikov-de Haas (SdH) oscillation analysis. It is demonstrated that mobility in the higher energy band is worse than that in the lower energy band, resulting in sharp mobility drop at higher surface carrier concentrations (Ns) and a clear hump in Id-Vg characteristics at low temperatures of less than 20 K. In order to further enhance mobility in (110) pFETs, the increase in the energy split between H and L bands is important.
AB - The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained from the Shubnikov-de Haas (SdH) oscillation analysis. It is demonstrated that mobility in the higher energy band is worse than that in the lower energy band, resulting in sharp mobility drop at higher surface carrier concentrations (Ns) and a clear hump in Id-Vg characteristics at low temperatures of less than 20 K. In order to further enhance mobility in (110) pFETs, the increase in the energy split between H and L bands is important.
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U2 - 10.1109/IEDM.2009.5424316
DO - 10.1109/IEDM.2009.5424316
M3 - Conference contribution
AN - SCOPUS:77952369990
SN - 9781424456406
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 19.7.1-19.7.4
BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Y2 - 7 December 2009 through 9 December 2009
ER -