Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility

Tsunaki Takahashi, Gento Yamahata, Jun Ogi, Tetsuo Kodera, Shunri Oda, Ken Uchida

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained from the Shubnikov-de Haas (SdH) oscillation analysis. It is demonstrated that mobility in the higher energy band is worse than that in the lower energy band, resulting in sharp mobility drop at higher surface carrier concentrations (Ns) and a clear hump in Id-Vg characteristics at low temperatures of less than 20 K. In order to further enhance mobility in (110) pFETs, the increase in the energy split between H and L bands is important.

    Original languageEnglish
    Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
    Pages19.7.1-19.7.4
    DOIs
    Publication statusPublished - 2009 Dec 1
    Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
    Duration: 2009 Dec 72009 Dec 9

    Publication series

    NameTechnical Digest - International Electron Devices Meeting, IEDM
    ISSN (Print)0163-1918

    Other

    Other2009 International Electron Devices Meeting, IEDM 2009
    CountryUnited States
    CityBaltimore, MD
    Period09/12/709/12/9

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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  • Cite this

    Takahashi, T., Yamahata, G., Ogi, J., Kodera, T., Oda, S., & Uchida, K. (2009). Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 19.7.1-19.7.4). [5424316] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424316