Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

K. Matsuda, T. Matsumoto, H. Saito, K. Nishi, T. Saiki

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

Original languageEnglish
Pages (from-to)377-382
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
Externally publishedYes
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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