Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

K. Matsuda, T. Matsumoto, H. Saito, K. Nishi, Toshiharu Saiki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

Original languageEnglish
Pages (from-to)377-382
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
Externally publishedYes

Fingerprint

optical microscopes
Semiconductor quantum dots
near fields
Photoluminescence
Microscopes
Optical properties
quantum dots
Scanning
photoluminescence
optical properties
scanning
Ultrafast lasers
decay
barrier layers
Pulsed lasers
Quantum efficiency
quantum efficiency
pulsed lasers
flow velocity
examination

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope. / Matsuda, K.; Matsumoto, T.; Saito, H.; Nishi, K.; Saiki, Toshiharu.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 7, No. 3, 05.2000, p. 377-382.

Research output: Contribution to journalArticle

@article{f1088aaa4ba642fe8c8a31c3556fc1c7,
title = "Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope",
abstract = "We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.",
author = "K. Matsuda and T. Matsumoto and H. Saito and K. Nishi and Toshiharu Saiki",
year = "2000",
month = "5",
doi = "10.1016/S1386-9477(99)00345-8",
language = "English",
volume = "7",
pages = "377--382",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Direct observation of variations of optical properties in single quantum dots by using time-resolved near-field scanning optical microscope

AU - Matsuda, K.

AU - Matsumoto, T.

AU - Saito, H.

AU - Nishi, K.

AU - Saiki, Toshiharu

PY - 2000/5

Y1 - 2000/5

N2 - We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

AB - We study the variations of optical properties of self-assembled In0.5Ga0.5As single quantum dots (QDs) in the spatial and time domains by combining a near-field scanning optical microscope with an ultrafast pulsed laser. Through the examinations of several tens of QDs, we find that the variations of photoluminescence (PL) intensity strongly depend on the condition of the initial carrier creation. The differences in quantum efficiency and those in the carrier flow rate into QDs cause the large distribution of PL intensity when the carriers are excited in the barrier layers. From the results of time-resolved PL decay measurements, we find that there are two types of QDs exhibiting quite different PL decay profiles.

UR - http://www.scopus.com/inward/record.url?scp=0033726266&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033726266&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(99)00345-8

DO - 10.1016/S1386-9477(99)00345-8

M3 - Article

AN - SCOPUS:0033726266

VL - 7

SP - 377

EP - 382

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3

ER -