We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Oct 11|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)