Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

K. Matsuda, T. Saiki, T. Yamada, T. Ishizuka

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).

    Original languageEnglish
    Pages (from-to)3077-3079
    Number of pages3
    JournalApplied Physics Letters
    Volume85
    Issue number15
    DOIs
    Publication statusPublished - 2004 Oct 11

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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