Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

K. Matsuda, Toshiharu Saiki, T. Yamada, T. Ishizuka

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).

Original languageEnglish
Pages (from-to)3077-3079
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
Publication statusPublished - 2004 Oct 11

Fingerprint

near fields
spatial resolution
microscopy
photoluminescence
high resolution
excitons
spectroscopy
quantum wells
optical microscopes
scanning
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution. / Matsuda, K.; Saiki, Toshiharu; Yamada, T.; Ishizuka, T.

In: Applied Physics Letters, Vol. 85, No. 15, 11.10.2004, p. 3077-3079.

Research output: Contribution to journalArticle

@article{5638e0b807384fdfb7a74a1f0346e5ca,
title = "Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution",
abstract = "We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7{\%}) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2{\%}).",
author = "K. Matsuda and Toshiharu Saiki and T. Yamada and T. Ishizuka",
year = "2004",
month = "10",
day = "11",
doi = "10.1063/1.1806540",
language = "English",
volume = "85",
pages = "3077--3079",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

AU - Matsuda, K.

AU - Saiki, Toshiharu

AU - Yamada, T.

AU - Ishizuka, T.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).

AB - We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).

UR - http://www.scopus.com/inward/record.url?scp=8644267613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=8644267613&partnerID=8YFLogxK

U2 - 10.1063/1.1806540

DO - 10.1063/1.1806540

M3 - Article

AN - SCOPUS:8644267613

VL - 85

SP - 3077

EP - 3079

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -