Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

K. Matsuda; T. Saiki; T. Yamada; T. Ishizuka

doi:10.1063/1.1806540

Direct optical observation of compositional fluctuation in GaAs _1-xN_x by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

K. Matsuda, T. Saiki, T. Yamada, T. Ishizuka

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We describe imaging spectroscopy of GaAS_1-xN_x/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs_1-xN_x/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs_1-xN_x with a higher N concentration (x = 1.2%).

Original language	English
Pages (from-to)	3077-3079
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	15
DOIs	https://doi.org/10.1063/1.1806540
Publication status	Published - 2004 Oct 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1806540

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@article{5638e0b807384fdfb7a74a1f0346e5ca,

title = "Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution",

abstract = "We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).",

author = "K. Matsuda and T. Saiki and T. Yamada and T. Ishizuka",

note = "Funding Information: The authors thank M. Ohtsu and S. Mononobe for technical advice including the fabrication of the optical fiber probe, and N. Ikoma, M. Takahashi, A. Moto, and S. Takagishi for fruitful discussions. This study was performed through Active Nano-Characterization and Technology Project, Special Coordination Funds of the Ministry of Education, Culture, Sports, Science, and Technology of the Japanese Government.",

year = "2004",

month = oct,

day = "11",

doi = "10.1063/1.1806540",

language = "English",

volume = "85",

pages = "3077--3079",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

AU - Matsuda, K.

AU - Saiki, T.

AU - Yamada, T.

AU - Ishizuka, T.

N1 - Funding Information: The authors thank M. Ohtsu and S. Mononobe for technical advice including the fabrication of the optical fiber probe, and N. Ikoma, M. Takahashi, A. Moto, and S. Takagishi for fruitful discussions. This study was performed through Active Nano-Characterization and Technology Project, Special Coordination Funds of the Ministry of Education, Culture, Sports, Science, and Technology of the Japanese Government.

PY - 2004/10/11

Y1 - 2004/10/11

N2 - We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).

AB - We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).

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DO - 10.1063/1.1806540

M3 - Article

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SN - 0003-6951

VL - 85

SP - 3077

EP - 3079

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Direct optical observation of compositional fluctuation in GaAs _1-xN_x by near-field photoluminescence spectroscopy and microscopy with high spatial resolution

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